193nm immersion resist without topcoat is production preferred solution. The challenge of 193nm immersion resist is both low leaching level and high performance. This paper summarizes the screening results of selected 193nm immersion resists which are designed for use without top coatings. Our evaluation is divided into several phases. Leaching levels of resist samples were first tested. The leaching data were analyzed and compared to our specifications. Both binary image mask and alternating phase-shift mask exposures were done to evaluate the process window, lineedge roughness, and resist pattern profile. Resist films were rinsed by DI water prior to or after exposure, and contrast curves were measured to investigate the resist sensitivity change. The results are compared with resist systems which use developer-soluble topcoats.
Several silicon containing topresists for bilayer oxygen reactive ion etching systems were developed and examined. Each topresist consists of a silicon containing alkaline soluble copolymer and a 2‐diazo‐1‐naphthalenone‐4‐sulphonic acid ester photoactive compond (PAC). Half micron structures in the topresist were obtained with two different resist systems through deep‐UV (257 nm) or iline exposure. The etch rate ratios (planarizing layer:copolymer) vary between 7:1 and 13:1 under anisotropic etching conditions. Linewidth loss during oxygen RIE (reactive ion etching) pattern transfer is a problem for resists containing about 10% silicon, but equal lines and spaces after etching can be obtained through the use of thick topresists or linewidth bias in the topresist prior to etching.
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