Silicon containing photoresists for half micron lithography

Sezi, Recai; Sebald, Michael; Leuschner, Rainer

doi:10.1002/pen.760291313

Cited by 18 publications

(7 citation statements)

References 9 publications

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“…Although this method is useful for uncritical structural dimensions, it cannot be applied to resolve fine patterns. As it was shown for a positive tone bilayer resist system, underexposure of the imaging resist prevent the resolution of structures near the optical resolution limit [6].…”

Section: Anhydride-containing Polymers For Aqueous-based Silylationmentioning

confidence: 92%

Functionalized polymers for high‐resolution photolithography

Sebald¹,

Ahne²,

Leuschner³

et al. 1994

Polymers for Advanced Techs

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Polymers obtained by radical polymerization of maleic anhydride with different monomers are used in bilayer photoresists for the CARL (Chemical Amplification of Resist Lines) process. Aqueous‐based silylation of resist patterns with bisaminopropyl‐oligodimethylsiloxane enhances oxygen–plasma etch resistance and creates widened structures. Thus, the resolution capability of optical exposure tools can be used to the full extent and even structures beyond the optical resolution limit become accessible. Copolymerization of maleic anhydride with tBOC‐maleimide or methacrylic acid t‐butylester yields polymers for highly sensitive acid‐catalyzed deep UV resists. With the use of a KrF excimer‐laser stepper 0.25 μm structures are resolved.

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Section: Anhydride-containing Polymers For Aqueous-based Silylationmentioning

confidence: 92%

Functionalized polymers for high‐resolution photolithography

Sebald¹,

Ahne²,

Leuschner³

et al. 1994

Polymers for Advanced Techs

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“…[21,28,30,[32][33][34][35][36][37][38] Three main TLI approaches have been investigated for EUV lithography, namely top surface imaging (TSI), [22,27,28,30,32,[39][40][41][42] bilayer resists [5,43,44] and ultra thin single layer resists over hardmask (UTR). [5,28,[32][33][34][35] In TSI, the uppermost layer of either the exposed or unexposed regions can be selectively silylated by gaseous or liquid silanes.…”

Section: Multi-layer Resistsmentioning

confidence: 99%

The convergence of top-down and bottom-up nanofabrication: formation of 3D structures

Yang

Dai

et al. 2005

SPIE Proceedings

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Lithography and the processes associated with it are the backbone of the nanotechnology revolution. Several developments are occurring simultaneously: a drive to reduce minimum feature size leading to advances in microelectronics, the use of lithographically patterned structures to prepare devices for photonics, biotechnology and other forms of nanotechnology and finally the drive to create three-dimensional (3D) structures for device and new materials creation. Thus the controlled formation of nanometer scale structures in two and three dimensions is of increasing interest in many applications. This paper will overview new approaches for the construction of small-scale structures using methods generally considered as next generation lithography. New approaches derived from two photon processes for the formation of complex images and the development of patterned structures will be described. Finally in the production of 3D patterns, the possible role of self-assembly coupled to lithography will be examined. Photodefinable block copolymers with erodable microstructures have been successfully used to form mesoporous materials and will be discussed.

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“…However, photosensitivity of alkaline-developable diazo-inhibited resists can be improved to some extent with the use of resist polymers with improved alkaline solubility, e.g. co-maleimide/styrene [10] and co-maleimide/ allyl-trimethylsilane [6] that were used in resists for NUV and DUV. In order to obtain anhydride-containing polymers with improved alkaline solubility for the Si-CARL process the anhydride groups in Polymer I and II were substituted partially by maleimide, thus yielding Polymer III and IV ( Fig.…”

Section: Measurementsmentioning

confidence: 99%

“…Lithographic patterning in a thin photosensitive top resist over a planarizing layer results in wide focus latitudes, and anisotropic pattern transfer in oxygen plasma (O2RIE) allows bottom resist structures to be made at high patterns [5,6,7]. This unavoidable linewidth loss deteriorates the process latitude previously gained, especially in sub-half micron L lithography.…”

Section: Introductionmentioning

confidence: 99%

<title>Application aspects of the Si-CARL bilayer process</title>

Sebald

Berthold

Beyer

et al. 1991

Advances in Resist Technology and Processing VIII

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The basic chemistry and lithographic characteristics of anhydride-containing, diazo-based NUV and DUV resists as well as silylation of top resist patterns with aqueous solutions of silicon-containing diamines in the Si-CARL bilayer process (CARL: Chemical Amplification of Resist Lines) were reported recently. This paper describes technical control of the Si-CARL process for g-line and DUV in a 6" pilot line using automatic equipment. Linewidth uniformity of top resist patterns is not affected by silylation and is found to be 0.045 im (3) for nominal 0.4 jim lines! spaces, the resolution limit of the 0.55 NA g-line stepper used. Both overexposure and linewidth increase due to silylation conditions can be used in the Si-CARL process for optimization of defocus latitudes. With the use of a 0.55 NA g-line stepper total defocus latitudes are 2.8 im for 0.6 im equal lines and spaces and > 3.2 xm for isolated 0.6 im spaces. In order to meet the requirement for sufficient throughput on KrF-excimerlaser steppers the sensitivity of DUV top resists is improved by chemical variations of resist polymers. The use of maleimide-containing resist polymers with improved alkaline solubility in diazo-inhibited top resists allows resolution of 0.25 im lines and spaces at 161 mJ!cm2 on a 0.37 NA KrF-excimerlaser stepper. Further considerable improvement ofDUV sensitivity to 1 1 mJ!cm2 was achieved using an acid-catalyzed top resist based on onium-salt and a terpolymer containing N-t-BOC-maleimide-units.

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Silicon containing photoresists for half micron lithography

Cited by 18 publications

References 9 publications

Functionalized polymers for high‐resolution photolithography

Functionalized polymers for high‐resolution photolithography

The convergence of top-down and bottom-up nanofabrication: formation of 3D structures

<title>Application aspects of the Si-CARL bilayer process</title>

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