New Photoresist Based on Amorphous Low Molecular Weight Polyphenols

Hirayama, Taku; Shiono, Daiju; Hada, Hideo; Onodera, Junichi; Ueda, Mitsuru

doi:10.2494/photopolymer.17.435

Cited by 66 publications

(37 citation statements)

References 20 publications

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“…[ 89 ] These molecular resists, while smaller, may also improve the uniformity of blends with PAGs and other additives, since miscibility of polymer blends decreases with increasing molar mass. [ 90 ] In general the molecular glass resist has a well-defi ned small-molecule core that bears protected base-soluble groups (such as hydroxyls and carboxyls) as shown in Figure 21b .…”

Section: Advances By Materials Structurementioning

confidence: 99%

Photoresist Latent and Developer Images as Probed by Neutron Reflectivity Methods

Prabhu¹,

Kang²,

VanderHart³

et al. 2010

Advanced Materials

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Photoresist materials enable the fabrication of advanced integrated circuits with ever-decreasing feature sizes. As next-generation light sources are developed, using extreme ultraviolet light of wavelength 13.5 nm, these highly tuned formulations must meet strict image-fidelity criteria to maintain the expected performance gains from decreases in feature size. However, polymer photoresists appear to be reaching resolution limits and advancements in measurements of the in situ formed solid/solid and solid/liquid interface is necessary. This Review focuses on the chemical and physical structure of chemically amplified photoresists at the lithographic feature edge at length scales between 1 nm and 100 nm. Neutron reflectivity measurements provide insight into the nanometer-scale composition profiling of the chemical latent image at an ideal lithographic line-edge that separates optical resolution effects from materials processing effects. Four generations of advanced photoresist formulations were examined over the course of seven years to quantify photoresist/photoacid and photoresist/developer interactions on the fidelity of lithographic features. The outcome of these measurements complement traditional resist design criteria by providing the effects of the impacts of the photoresist and processing on the feature fidelity. These physical relations are also described in the context of novel resist architectures under consideration for next-generation photolithography with extreme-ultraviolet radiation.

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Section: Advances By Materials Structurementioning

confidence: 99%

Photoresist Latent and Developer Images as Probed by Neutron Reflectivity Methods

Prabhu¹,

Kang²,

VanderHart³

et al. 2010

Advanced Materials

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“…Molecular glass resists have attracted much attention because they are believed to have an advantage in terms of molecular size, leading to the reduction of LER. 8,9,[22][23][24][25] Although many excellent resists have been reported, their LER has barely reached that of high-performance polymer resists. The reduction of molecular size has not necessarily directly led to a decrease in LER.…”

Section: Introductionmentioning

confidence: 99%

Radiation Chemistry in Chemically Amplified Resists

Kozawa

Tagawa

2010

Jpn. J. Appl. Phys.

330

319

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Historically, in the mass production of semiconductor devices, exposure tools have been repeatedly replaced with those with a shorter wavelength to meet the resolution requirements projected in the International Technology Roadmap for Semiconductors issued by the Semiconductor Industry Association. After ArF immersion lithography, extreme ultraviolet (EUV; 92.5 eV) radiation is expected to be used as an exposure tool for the mass production at or below the 22 nm technology node. If realized, 92.5 eV EUV will be the first ionizing radiation used for the mass production of semiconductor devices. In EUV lithography, chemically amplified resists, which have been the standard resists for mass production since the use of KrF lithography, will be used to meet the sensitivity requirement. Above the ionization energy of resist materials, the fundamental science of imaging, however, changes from photochemistry to radiation chemistry. In this paper, we review the radiation chemistry of materials related to chemically amplified resists. The imaging mechanisms from energy deposition to proton migration in resist materials are discussed.

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“…Bulky, dense structures based on similar design concepts to the phenylbenzene derivatives have also been developed. [16,17] Owing to their unique architecture, phenolic MGs show a more pronounced increase in T g with increasing molecular weight. MGs that consists of six or more hydroxyl groups possess a T g comparable to poly(4-hydroxy styrene) despite being an order of magnitude smaller in size.…”

Section: K Ober Et Al / Molecular Glass Resistsmentioning

confidence: 99%

Molecular Glass Resists as High‐Resolution Patterning Materials

2008

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The success of the semiconductor industry is based on the ability to fabricate hundreds of millions of devices on a single chip. In order to fulfill the ever‐shrinking feature sizes, the industry requires new patternable materials in order to operate in the sub‐50 nm regime. Molecular glass (MG) resists are a new type of patterning material that has gained considerable attention over the past few years. This Research News article describes the chemical and structural aspects of MGs as well as important concepts of MG resist design. We also highlight some of the recent advances in high‐resolution patterning capabilities with next‐generation imaging tools.

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New Photoresist Based on Amorphous Low Molecular Weight Polyphenols

Cited by 66 publications

References 20 publications

Photoresist Latent and Developer Images as Probed by Neutron Reflectivity Methods

Photoresist Latent and Developer Images as Probed by Neutron Reflectivity Methods

Radiation Chemistry in Chemically Amplified Resists

Molecular Glass Resists as High‐Resolution Patterning Materials

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