Guided by the paper [10] by Polyakov and Rychkov, we compute the second variational derivative of a wavy plane Wilson surface observable, to find that a necessary condition for a proposed surface equation to be satisfied in the large-N limit is that we are in the critical dimension D = 6.
Extreme Ultra Violet (EUV) lithography is one of the most promising candidate technologies for the high-volume manufacturing (HVM) of semiconductor devices at the sub-14 nm half pitch lines and spaces (LS) pattern for 7 nm node and beyond. EUV resists is strongly required high resolution (R) with high sensitivity (S) and low line edge/ width roughness (L) for HVM application. Experimental results on chemically amplified (CA) resist will be shown to study the influence of proton source, photo acid generator (PAG) cation and the other materials on lithographic performance, and then resist formulation designed for improving RLS trade-off will be discussed.
Double patterning technology based on existing ArF immersion lithography is considered as the most viable option for complementary metal oxide semiconductor (CMOS) node of 32 nm and below. Most of double patterning approaches previously described requires intermediate processing step such as hard mask etching, spacer material deposition, and resist pattern freezing. The requirement of these additional steps is now leading way to requests for throughput reduction and low cost for production for double patterning technology applications. In this paper, litho-litho-etch (LLE) double patterning without any intermediate processing steps is investigated to achieve narrow pitch resist imaging. The LLE options examined in this work are combinations of positive tone-negative tone and positive tonepositive tone photoresist double patterning process. These are the alternative processes in pattern freezing process free LLE double patterning. The goals of this work are to determine witch of these approaches is the most viable for future application and to confirm the patterning potential for 32 nm and below half pitch resist imaging.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.