Extreme Ultra Violet (EUV) lithography is one of the most promising candidate technologies for the high-volume manufacturing (HVM) of semiconductor devices at the sub-14 nm half pitch lines and spaces (LS) pattern for 7 nm node and beyond. EUV resists is strongly required high resolution (R) with high sensitivity (S) and low line edge/ width roughness (L) for HVM application. Experimental results on chemically amplified (CA) resist will be shown to study the influence of proton source, photo acid generator (PAG) cation and the other materials on lithographic performance, and then resist formulation designed for improving RLS trade-off will be discussed.
The effects of electron-elecbon interactions on the magnetic properties of alkali metals are reviewed. At the densities of the solid or liquid near the melting point, magnetic properties are well described by a genedimtion of the Stoner model. This approach &%aunts for enhancement ofthe magnetic susceptibility and deviations from the Koninga relation between the NMR Knight shift and the corresponding wnuibution to nuclear spin-lattice relaxation. When expanded by heating the liquid toward the liquid-gas critical point, the magnetic properties and optical reflectivity of caesium develop new characteristics best described by correlation enhancement of the effective mass. Behaviour of the Koninga relation deviation implies a change in the spin wrrelations from essentially ferromagnetic in the dense liquid to antiferromagnetic in the dilute mehl. The shilarity of thme effens to those observed in the high Tc supemndndng cupntes is discussed.
EUV lithography is one of the most promising candidate technologies for high volume manufacturing(HVM) of 7nm node beyond. To apply EUV lithography to HVM, high resolution and fast sensitivity with low roughness are required. To improve sensitivity, we developed novel PAG that includes electron withdrawing group (EWG). The PAG showed high acid generation efficiency from our experimental results. Increasing proton source unit in resist matrix also produces high acid generation efficiency. By using the novel PAG and increasing proton source unit ratio in resist matrix, we developed novel resists that produces high resolution patterns with reasonable sensitivity.
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