Topcoat-free ArF negative tone resist

Ando, Tomoyuki; Abe, Sho; Takasu, Ryoichi; Iwashita, Jun; Matsumaru, Shogo; Watanabe, Ryoji; Hirahara, Komei; Suzuki, Yujiro; Tsukano, Miki; Iwai, Takeshi

doi:10.1117/12.813787

Cited by 7 publications

(7 citation statements)

References 22 publications

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“…5Ϫ10,12Ϫ15 While insoluble prepatterns consisting of cross-linked negative tone photoresists patterned by electron-beam or i-line ultraviolet lithography have been used as chemical 16,17 and topographical 18Ϫ20 guiding patterns for DSA, few high-resolution cross-linking negative tone 193 nm immersion-compatible photoresists have been reported (with none being commercially available). 28 In order to assess the viability of DSA as a lithographic technology for high-volume manufacturing of semiconductor devices, it is necessary to integrate DSA with state-of-the-art 193 nm immersion lithography in a straightforward and process-friendly manner. In this paper, we report simple and versatile integration schemes to fabricate topographical and chemical patterns for DSA using optical lithography and conventional 193 nm photoresists and imaging film stacks.…”

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confidence: 99%

“…Unfortunately, typical DSA processes use organic casting solvents and high-temperature annealing processes which destroy the fidelity of typical photoresist prepatterns. To circumvent these issues, most DSA demonstrations have used patterned photoresist only as a sacrificial intermediate that is converted into a more robust topographical or chemical prepattern by pattern transfer into an underlying material, such as a hardmask. − ,− While insoluble prepatterns consisting of cross-linked negative tone photoresists patterned by electron-beam or i-line ultraviolet lithography have been used as chemical , and topographical − guiding patterns for DSA, few high-resolution cross-linking negative tone 193 nm immersion-compatible photoresists have been reported (with none being commercially available) …”

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Simple and Versatile Methods To Integrate Directed Self-Assembly with Optical Lithography Using a Polarity-Switched Photoresist

et al. 2010

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We report novel strategies to integrate block copolymer self-assembly with 193 nm water immersion lithography. These strategies employ commercially available positive tone chemically amplified photoresists to spatially encode directing information into precise topographical or chemical prepatterns for the directed self-assembly of block copolymers. Each of these methods exploits the advantageous solubility and thermal properties of polarity-switched positive tone photoresist materials. Precisely registered, sublithographic self-assembled structures are fabricated using these versatile integration schemes which are fully compatible with current optical lithography patterning materials, processes, and tooling.

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Simple and Versatile Methods To Integrate Directed Self-Assembly with Optical Lithography Using a Polarity-Switched Photoresist

et al. 2010

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“…For the patterning of small trenches, negative tone resists have been successfully developed, although for ArF with resist qualities rarely close to that of state-of-the-art positive tone resists. [2][3][4] As an alternative to negative tone resist, image reversal layers spun or deposited on the wafer after the development of a pattern in positive tone resist have been demonstrated. 5 However, this approach involves additional processing steps (typically coating, baking, etching) leading to a larger (and hence more costly) processing complexity.…”

Section: Implementation and Benefit Of Lf Imaging Withmentioning

confidence: 99%

Comparing positive and negative tone development process for printing the metal and contact layers of the 32- and 22-nm nodes

Bekaert

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Truffert

et al. 2010

J. Micro/Nanolith. MEMS MOEMS

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A strong demand exists for techniques that extend application of ArF immersion lithography. Besides techniques such as litho-friendly design, dual exposure/patterning schemes, customized illumination, alternative processing schemes are also viable candidates. One of the most promising alternative flows uses image reversal by means of a negative tone development (NTD) step with a Fujifilm solvent-based developer. Traditionally, contact and trench printing uses a dark-field mask in combination with positive tone resist and positive tone development. With NTD, the same features are printed in positive resist using light-field masks, and consequently with better image contrast. We present an overview of NTD applications, comparing the NTD performance to that of the traditional development. Experimental work is performed at a 1.35 numerical aperture, targeting the contact/metal layers of the 32-and 22-nm nodes. For contact printing, we consider both single-and dual-exposure schemes for regular arrays and 2-D patterns. For trench printing, we study 1-D, line end, and 2-D patterns. We also assess the etch capability and critical dimension uniformity performance of the NTD process. We proves the added value of NTD. It enables us to achieve a broader pitch range and/or smaller litho targets, which makes NTD attractive for the most advanced lithography applications, including double patterning. C 2010 Society of Photo-Optical Instrumentation Engineers.

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“…Recently, top coat-free ArF negative-tone resist was developed and demonstrated, using a 1.07 NA 193 nm immersion scanner, with a performance close to that of a corresponding positive-tone resist [48]. Historically, negativetone resists tended to exhibit pattern bridging, which must be resolved for use with 193 nm immersion exposure technologies.…”

Section: (I) Options For Extending 193 Nm Lithographymentioning

confidence: 99%

Lithography for enabling advances in integrated circuits and devices

Garner

2012

Phil. Trans. R. Soc. A.

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Because the transistor was fabricated in volume, lithography has enabled the increase in density of devices and integrated circuits. With the invention of the integrated circuit, lithography enabled the integration of higher densities of field-effect transistors through evolutionary applications of optical lithography. In 1994, the semiconductor industry determined that continuing the increase in density transistors was increasingly difficult and required coordinated development of lithography and process capabilities. It established the US National Technology Roadmap for Semiconductors and this was expanded in 1999 to the International Technology Roadmap for Semiconductors to align multiple industries to provide the complex capabilities to continue increasing the density of integrated circuits to nanometre scales. Since the 1960s, lithography has become increasingly complex with the evolution from contact printers, to steppers, pattern reduction technology at i-line, 248 nm and 193 nm wavelengths, which required dramatic improvements of mask-making technology, photolithography printing and alignment capabilities and photoresist capabilities. At the same time, pattern transfer has evolved from wet etching of features, to plasma etch and more complex etching capabilities to fabricate features that are currently 32 nm in high-volume production. To continue increasing the density of devices and interconnects, new pattern transfer technologies will be needed with options for the future including extreme ultraviolet lithography, imprint technology and directed self-assembly. While complementary metal oxide semiconductors will continue to be extended for many years, these advanced pattern transfer technologies may enable development of novel memory and logic technologies based on different physical phenomena in the future to enhance and extend information processing.

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Topcoat-free ArF negative tone resist

Cited by 7 publications

References 22 publications

Simple and Versatile Methods To Integrate Directed Self-Assembly with Optical Lithography Using a Polarity-Switched Photoresist

Simple and Versatile Methods To Integrate Directed Self-Assembly with Optical Lithography Using a Polarity-Switched Photoresist

Comparing positive and negative tone development process for printing the metal and contact layers of the 32- and 22-nm nodes

Lithography for enabling advances in integrated circuits and devices

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