Focused phosphorus ion beam implantation into silicon

Madokoro, Y.; Shukuri, S.; Umemura, K.; Tamura, M.

doi:10.1016/0168-583x(89)90837-9

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“…This is an indication of a higher damage for longer dwell-times. The same was found by Madokoro et al 16 for FIB implantation of phosphorus into silicon.…”

supporting

confidence: 68%

Dose rate effects in focused ion beam synthesis of cobalt disilicide

Hausmann

Bischoff

Teichert

et al. 1998

Applied Physics Letters

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The influence of the dwell-time in focused ion beam synthesis has been investigated. Cobalt disilicide layers have been produced by 70 keV Co2+ implantation into silicon and have been investigated by Rutherford backscattering spectroscopy and scanning electron microscopy. At an implantation temperature of about 400 °C it is only possible to form continuous CoSi2 layers using sufficiently short pixel dwell-times. This result is explained by an enhanced damage accumulation for longer dwell-times.

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“…This is an indication of a higher damage for longer dwell-times. The same was found by Madokoro et al 16 for FIB implantation of phosphorus into silicon.…”

supporting

confidence: 68%