Damage formation and annealing of ion implantation in Si

Tamura, M.

doi:10.1016/0920-2307(91)90007-a

Cited by 55 publications

(10 citation statements)

References 104 publications

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“…The damage profiles have been studied by TEM to evaluate line-scanned FIB profiles (Assayag et al, 1993). However, a linear relationship between the dose and beam profiles might be corrected due to a dose-rate effect (Tamura, 1991). The higher the ion dose-rate, the lower the critical ion dose for continuous amorphous layer formation.…”

Section: Characteristics Of Fib Milling Positioning Accuracy For Crosmentioning

confidence: 99%

Cross-sectional sample preparation by focused ion beam: A review of ion-sample interaction

Ishitani

Yaguchi

1996

Microsc. Res. Tech.

110

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A focused ion beam (FIB) was applied for cross‐sectional sample preparation with both transmission electron microscopes (TEM) and scanning electron microscopes (SEM). The FIB sample preparation has the advantage of high positioning accuracy for cross sections. On the other hand, a broad ion beam (BIB) has been conventionally used for thinning TEM samples. Although both FIB and BIB use energetic ion beams, they are essentially different from each other in many aspects such as beam size, beam current density, incident angle of the beam with respect to cross sections, and beam scanning (i.e., dynamic or static beam). In this study, FIB cross‐sectioning is compared with BIB thinning. We review inherent characteristics such as positioning accuracy and uniformity of cross section, radiation damage, and beam heating. Discussion is held from a viewpoint of ion beam and sample interaction. © 1996 Wiley‐Liss, Inc.

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Section: Characteristics Of Fib Milling Positioning Accuracy For Crosmentioning

confidence: 99%

Cross-sectional sample preparation by focused ion beam: A review of ion-sample interaction

Ishitani

Yaguchi

1996

Microsc. Res. Tech.

110

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“…Residual defects are known to form during annealing of Si that is patterned with focused beams of Ga + 18 , 38 , B + 39 and P + 39 ions. But in our case, since no foreign ions are implanted, the defect formation process may be more analogous to the formation of mask-edge defects 39 , 40 via multi-directional solid phase epitaxial regrowth (SPER) 41 , which can occur at the ~500–600 °C temperature relevant here 42 . In multidirectional SPER, lateral and vertical amorphous-to-crystalline growth fronts impinge and defects (known as clamshell or zipper defects) are generated because of mismatch at the junctions between growth fronts 43 .…”

Section: Resultsmentioning

confidence: 99%

“…In multidirectional SPER, lateral and vertical amorphous-to-crystalline growth fronts impinge and defects (known as clamshell or zipper defects) are generated because of mismatch at the junctions between growth fronts 43 . At the atomic level, recrystallization in the < 001 > and < 110 > growth directions occurs via the formation and filling in of {111} nanofacets on the interfaces 39 , 40 . When the (001) growth front moving upwards meets the {110} growth fronts moving inwards, mis-registry on the {111} planes is possible.…”

Section: Resultsmentioning

confidence: 99%

Directed Self-Assembly of Ge Quantum Dots Using Focused Si2+ Ion Beam Patterning

Chee

Kammler

Graham

et al. 2018

Sci Rep

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We show that templating a Si surface with a focused beam of Si2+ or Si+ ions can create suitable nucleation sites for the subsequent growth of self-assembled Ge quantum dots by chemical vapor deposition. To determine the mechanism of patterning we use atomic force microscopy to show that, similar to Ga+ patterning, the formation of a surface pit is required to enable control over Ge quantum dot locations. We find that relatively high implantation doses are required to achieve patterning, and these doses lead to amorphization of the substrate. We assess the degree to which the substrate crystallinity can be recovered by subsequent processing. Using in situ transmission electron microscopy heating experiments we find that recrystallization is possible at the growth temperature of the Ge quantum dots, but defects remain that follow the pattern of the initial implantation. We discuss the formation mechanism of the defects and the benefits of using Si ions for patterning both defects and quantum dots on Si substrates.

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“…Severe damage resulting from the low fluence imaging condition can be attributed to the inherent difference between the FIB process and the conventional ion implantation. The former uses much higher current density and a much slower scanning speed than the latter (Ikoma, 1990; Tamura, 1991). Table 3 lists the detailed parameters of our imaging process along with the conditions used in conventional ion implantation.…”

Section: Resultsmentioning

confidence: 99%

Effect of Focused Ion Beam Imaging on the Crystallinity of InAs

et al. 2015

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We investigated the effect of focused ion beam (FIB) imaging on the crystallinity of InAs using Raman scattering. A spatial correlation model was used to fit the broad band induced by FIB imaging. The fitting gives a correlation length of ~42 Å for the noisiest image condition (with an ion fluence of 7.4×1010 cm-2), implying severe damage in the surface layer of InAs. However, further increasing the fluence by several orders of magnitude only decreases the correlation length from 42 to 35 Å. We attribute the severe damage to the high beam current density and the low scanning speed of the FIB imaging process. These process conditions, along with low InAs thermal conductivity, also leads to a high local temperature in the exposed region that largely annihilated the defects and resulted in the nearly fluence-independent behavior.

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Damage formation and annealing of ion implantation in Si

Cited by 55 publications

References 104 publications

Cross-sectional sample preparation by focused ion beam: A review of ion-sample interaction

Cross-sectional sample preparation by focused ion beam: A review of ion-sample interaction

Directed Self-Assembly of Ge Quantum Dots Using Focused Si2+ Ion Beam Patterning

Effect of Focused Ion Beam Imaging on the Crystallinity of InAs

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