Articles you may be interested inLiquid metal ion source for cluster ions of metals and alloys: design and characteristics Rev. Sci. Instrum. 61, 366 (1990); 10.1063/1.1141295 Energy distributions of liquid metal alloy ion sources J. Vac. Sci. Technol. B 6, 919 (1988); 10.1116/1.584323 Characterization of phosphorus liquidmetal ion source as a dopant source in focused ion beam systemsA phosphorus liquid metal ion source using a Pt-P-Sb alloy has been newly developed. The ion emission characteristics such as mass-separated ion intensity, energy spread, and long-term beam stability are described. It is found that the p 2 + flux has the highest intensity with respect to charged P ions and is mass separable with a low mass resolution of m/ am"", 2. The source lifetime of more than 200 h has been obtained. A fine scanning ion microscope image made with a 140-ke V p 2 + focused ion beam has shown considerable promise for maskless P ion implantation.
Annealing behavior of structure, nature, and two-dimensional depth distributions of secondary defects in one-line-scan, 70-keV focused ion beam B-implanted (100) Si have been investigated mainly using cross-sectional transmission electron microscopy observations. In as-implanted layers for doses above 3×1015/cm2, triangular amorphous regions are formed with a two-dimensional spread on the order of a 0.2 μm, which is approximately an ion beam diameter. Secondary defects generated by annealing above 800 °C are confined within these triangular regions. By contrast, when 8×1014/cm2 implanted layers are annealed at 1000 °C, two-dimensional spreads of the grown defects vary from 0.2 to 0.6 μm in each implanted layer. However, in annealing at 800 °C, these defects remain near the projected range of boron and their lateral spread is confined to a beam diameter. Some results are discussed in comparison with two-dimensional impurity distributions, 140-keV P++ implantation, and Monte Carlo simulations.
ABSTRACFFormation of fine conductive layer patterns by focused ion beam ( FIB ) using tungsten hexacarbonyl [W(CO)6] has been carried out to study its deposition mechanism. The effects of beam current density on the deposition rate, using a chamber-type gas delivery system and a nozzle-type system has been investigated and compared. It is found that the amount of dependence of deposition yield on current density differs between the two systems. In addition, the difference in gas pressures of the two systems cause different compositions of the deposits. INTRODUCTIONFocused ion beam assisted deposition has gained a much attention because it enables rewiring and repairing of integrated circuits.1 A focused laser beam induced chemical reaction has also been utilized for these purposes.2 However, the application of laser beam to ULSI chips is thought to be impossible because of the difficulty in focusing the beam to a point less than 1 im in diameter.Electron beams have also been considered for IC repair because they cause decomposition of adsorbed molecules, which results in deposition.3 However, the reaction cross section for this process is smaller than that for the ion beam induced process.4 Therefore, ion beam induced deposition has the following advantages over laser beams and electron beams: the ability to be focused to a point well under 1 .tm in diameter, and a higher deposition rate than that of electron beam induced reaction. Another advantage is that an ion beam can be used for sputtering, and therefore, wire cutting and connection can be accomplished on submicron scale. These techniques can be invaluable tools, especially for the fabrication of application specified integrated circuits (ASIC) or wafer scale integrated circuits.However, the mechanism of the ion beam induced reaction is still not well understood. Carbon contamination which occurs during ion implantation5 and accumulation of carbon on the electron microscope samples6 are widely known phenomena that are similar to ion beam induced deposition. Some models have been proposed for these phenomena.5'7 The basic mechanism of the phenomena 62 Downloaded From: http://proceedings.spiedigitallibrary.org/ on 06/22/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx is supposed to be the same for an ion beam and an electron beam; namely, the molecules adsorbed on the substrate are decomposed by the beam radiation resulting in the deposition of metal or carbon atoms on the surface. Therefore, beam induced deposition can be described as competition on the substrate surface between the adsorption of gas and the decomposition of gas. Usually the beam current density is very high, and the supply of gas molecules to the surface is supposed to determine the rate of deposition. In this work, we investigate the influence of current density upon the deposition yield and examine the validity of the simple model proposed by Scheuer et al.8 EXPERIMENTALA 16-kY two-lens FIB system with no mass filter was used in this experiment. A gallium-indium-tin te...
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