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2012 IEEE Symposium on Security and Privacy 2012
DOI: 10.1109/sp.2012.12
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Flash Memory for Ubiquitous Hardware Security Functions: True Random Number Generation and Device Fingerprints

Abstract: We demonstrate that unmodified commercial Flash memory can provide two important security functions: true random number generation and digital fingerprinting. Taking advantage of random telegraph noise (a type of quantum noise source in highly scaled Flash memory cells) enables high quality true random number generation at a rate up to 10Kbits / second. A scheme based on partial programming exploits process variation in threshold voltages to allow quick generation of many unique fingerprints that can be used f… Show more

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Cited by 106 publications
(51 citation statements)
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“…Random number generators can be broadly classi ed into two categories [32,78,145,148]: 1) pseudo-random number generators (PRNGs) [18,98,100,102,133], which deterministically generate numbers starting from a seed value with the goal of approximating a true random sequence, and 2) true random number generators (TRNGs) [6,16,22,23,24,33,36,47,50,55,56,57,65,77,83,96,101,111,116,119,141,143,144,146,149,151,153,155,158], which generate random numbers based on sampling non-deterministic random variables inherent in various physical phenomena (e.g., electrical noise, atmospheric noise, clock jitter, Brownian motion).…”
Section: Introductionmentioning
confidence: 99%
“…Random number generators can be broadly classi ed into two categories [32,78,145,148]: 1) pseudo-random number generators (PRNGs) [18,98,100,102,133], which deterministically generate numbers starting from a seed value with the goal of approximating a true random sequence, and 2) true random number generators (TRNGs) [6,16,22,23,24,33,36,47,50,55,56,57,65,77,83,96,101,111,116,119,141,143,144,146,149,151,153,155,158], which generate random numbers based on sampling non-deterministic random variables inherent in various physical phenomena (e.g., electrical noise, atmospheric noise, clock jitter, Brownian motion).…”
Section: Introductionmentioning
confidence: 99%
“…In addition, the write failure in SRAM cells caused by reduced write duration or scaled V DD has been exploited to create random digital responses [21], [22]. NVM structures, including emerging ones, e.g., FLASH and phase change memory, are used to construct PUF [25], [26]. The resistance variation in metal interconnects on die has been utilized to design PUF due to its low sensitivity to environmental (e.g., voltage) variations.…”
Section: A Related Workmentioning
confidence: 99%
“…Fig. 11 shows the influence of clock delay lines (i.e., 1,9,17,25, and 32) on the percentage of unstable bits at 40°C, 55°C, and 70°C. Signature robustness is generally enhanced with more clock delay lines, since minor common variations on scan path delays can be detected accurately.…”
Section: Robustnessmentioning
confidence: 99%
“…In [13], a scheme combining garbage collection and per-page scrubbing is proposed for flash memory. In [14], scrubbing is also utilized to implement flash-based physical unclonable functions (PUF). However, due to program disturb effect 1 [15], scrubbing a page may introduce unpredictable errors to the pages within the same block.…”
Section: Related Work On Ssd Secure Deletionmentioning
confidence: 99%