Few-Electron Edge-State Quantum Dots in a Silicon Nanowire Field-Effect Transistor

Voisin, B.; Nguyễn, Việt Hùng; Renard, Julien; Jehl, X.; Barraud, S.; Triozon, François; Vinet, M.; Duchemin, Ivan; Niquet, Yann-Michel; Franceschi, S. De; Sanquer, M.

doi:10.1021/nl500299h

Cited by 91 publications

(89 citation statements)

References 29 publications

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“…Corner state quantum dots in Si nanowire transistors have been reported for different single and double gate topologies [9][10][11] and using both quantum dots and dopants [12]. In our novel quadruple gate configuration, we first of all confirm the creation of a single QD under a top-gate using gate G 1 as an example.…”

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confidence: 53%

Reconfigurable quadruple quantum dots in a silicon nanowire transistor

Betz

Tagliaferri

Vinet

et al. 2016

Applied Physics Letters

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We present a novel reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consist of an industrial quadruple-gate silicon nanowire field-effect transistor. Exploiting the corner effect, we study the versatility of the structure in the single quantum dot and the serial double quantum dot regimes and extract the relevant capacitance parameters. We address the fabrication variability of the quadruple-gate approach which, paired with improved silicon fabrication techniques, makes the corner state quantum dot approach a promising candidate for a scalable quantum information architecture.Semiconductor quantum bits relying on the charge or spin degree of freedom of a single electron, bound to a quantum dot (QD) or impurity atom, are considered promising candidates for the base elements of solid state quantum computing architectures [1]. Building a successful quantum computer, however, requires a scalable multi-qubit approach to implement the necessary algorithms [2]. Electron spins bound to silicon QDs are seen as promising candidates for this due to their long coherence time, electrical tunability and flexible coupling geometries [3][4][5]. A further advantage of using Si is the possibility to integrate with current complementary-metaloxide-semiconductor (CMOS) technology [5-8] and leverage its established industrial platform for large scale circuits. Recently, the integration of Si quantum dots and double quantum dots (DQD) into CMOS technology has been taken a step further with reports of fewelectron QDs, DQDs, and donor-QD hybrids created within industry-standard Si nanowire transistors [9][10][11][12]. Combined with a gate-based readout scheme that alleviates the need for a separate charge sensor [10-14] these approaches pave the way towards a large scale quantum computing architecture based on current CMOS technology.In this Letter, we report on a reconfigurable QD and DQD system in a quadruple-gate CMOS transistor. It incorporates one, or a pair, of CMOS corner state quantum dots [10,11] in a variety of configurations. Each of the four gates can host an independently tunable quantum dot created in the square channel by electrostatic enhancement and confinement resulting from the topgate electrodes and accompanying silicon nitride spacers. We characterise one exemplary single QD and demonstrate that different DQD configurations can be set at will. Building on previous demonstrations [10][11][12] results provide a way to scale up CMOS quantum information architectures and to create reconfigurable silicon multi-dot arrangements. The device presented here is a fully depleted silicon-oninsulator (FDSOI) nanowire field-effect transistor with four independently addressable top-gates. The polyarXiv:1603.03636v1 [cond-mat.mes-hall]

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supporting

confidence: 53%

Reconfigurable quadruple quantum dots in a silicon nanowire transistor

Betz

Tagliaferri

Vinet

et al. 2016

Applied Physics Letters

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“…Owing to this so-called corner effect, electron accumulation in silicon NWFETs 38 happens first at the top most corners. In addition, potential irregularities along the transport direction 39,40 confine these corner channels creating a parallel double quantum dot as schematically displayed in Fig. 1a.…”

Section: Resultsmentioning

confidence: 99%

Probing the limits of gate-based charge sensing

et al. 2015

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Quantum computation requires a qubit-specific measurement capability to readout the final state of individual qubits. Promising solid-state architectures use external readout electrometers but these can be replaced by a more compact readout element, an in situ gate sensor. Gate-sensing couples the qubit to a resonant circuit via a gate and probes the qubit's radiofrequency polarizability. Here we investigate the ultimate performance of such a resonant readout scheme and the noise sources that limit its operation. We find a charge sensitivity of 37 me Hz À 1/2 , the best value reported for this technique, using the example of a gate sensor strongly coupled to a double quantum dot at the corner states of a silicon nanowire transistor. We discuss the experimental factors limiting gate detection and highlight ways to optimize its sensitivity. In total, resonant gate-based readout has advantages over external electrometers both in terms of reduction of circuit elements as well as absolute charge sensitivity.

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“…The first few holes do not localize in edge states as in Ref. [24] because the channel is doped with Boron atoms and the back gate is grounded, therefore the hole are not pulled in the upper corners. They might rather be bound to clusters of two or more nearby Boron impurities which exist in the doped channel.…”

mentioning

confidence: 92%

Pauli blockade in a few-hole PMOS double quantum dot limited by spin-orbit interaction

Bohuslavskyi

Kotekar‐Patil

Maurand

et al. 2016

Applied Physics Letters

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We report on hole compact double quantum dots fabricated using conventional CMOS technology. We provide evidence of Pauli spin blockade in the few hole regime which is relevant to spin qubit implementations. A current dip is observed around zero magnetic field, in agreement with the expected behavior for the case of strong spin-orbit. We deduce an intradot spin relaxation rate ≈120 kHz for the first holes, an important step towards a robust hole spin-orbit qubit.

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Few-Electron Edge-State Quantum Dots in a Silicon Nanowire Field-Effect Transistor

Cited by 91 publications

References 29 publications

Reconfigurable quadruple quantum dots in a silicon nanowire transistor

Reconfigurable quadruple quantum dots in a silicon nanowire transistor

Probing the limits of gate-based charge sensing

Pauli blockade in a few-hole PMOS double quantum dot limited by spin-orbit interaction

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