Hole spins in silicon represent a promising yet barely explored direction for solid-state quantum computation, possibly combining long spin coherence, resulting from a reduced hyperfine interaction, and fast electrically driven qubit manipulation. Here we show that a silicon-nanowire field-effect transistor based on state-of-the-art silicon-on-insulator technology can be operated as a few-hole quantum dot. A detailed magnetotransport study of the first accessible hole reveals a g-factor with unexpectedly strong anisotropy and gate dependence. We infer that these two characteristics could enable an electrically driven g-tensor-modulation spin resonance with Rabi frequencies exceeding several hundred mega-Hertz.

The aggressive scaling of silicon-based nanoelectronics has reached the regime where device function is affected not only by the presence of individual dopants, but more critically their position in the structure. The quantitative determination of the positions of subsurface dopant atoms is an important issue in a range of applications from channel doping in ultra-scaled transistors to quantum information processing, and hence poses a significant challenge. Here, we establish a metrology combining low-temperature scanning tunnelling microscopy (STM) imaging and a comprehensive quantum treatment of the dopant-STM system to pin-point the exact lattice-site location of sub-surface dopants in silicon. The technique is underpinned by the observation that STM images of sub-surface dopants typically contain many atomic-sized features in ordered patterns, which are highly sensitive to the details of the STM tip orbital and the absolute lattice-site position of the dopant atom itself. We demonstrate the technique on two types of dopant samples in silicon -the first where phosphorus dopants are placed with high precision, and a second containing randomly placed arsenic dopants. Based on the quantitative agreement between STM measurements and multi-million-atom calculations, the precise lattice site of these dopants is determined, demonstrating that the metrology works to depths of about 36 lattice planes. The ability to uniquely determine the exact positions of subsurface dopants down to depths of 5 nm will provide critical knowledge in the design and optimisation of nanoscale devices for both classical and quantum computing applications.As we approach the ultimate regime of Feynman's vision 1 of nanotechnology based on atom-by-atom fabrication 2-5 , there is a critical need to match advances in miniaturisation with atomically precise metrology. In conventional CMOS 6 and tunnelling field effect 7,8 transistors the key relationship between doping profile and performance is now dominated by the positions of just a few dopant atoms, and currently cannot be quantitatively determined. Beyond conventional nanoelectronic devices, in quantum processors based on phosphorus dopants in silicon 9 the precise locations of the individual dopants is critical to the design and operation of spin-based quantum logic gates. Previous studies on locating subsurface dopant positions in semiconductors either provide donor depths based on statistical evidence 10 , or only qualitatively locate dopants within a few nanometers region (of the order of 2.5 nm or more)11 . The key metrological challenge in all of the ultra-scaled applications is the ability to determine the position of dopant atoms in the silicon crystal substrate with lattice-site precision, which will drastically transform our understanding at the most fundamental scale leading to devices with optimised functionalities.In this work, we present an atomically precise metrology and demonstrate the pinpointing of the position of subsurface phosphorous (P) and arsenic (As) dopants in si...

We report on microwave-driven coherent electron transfer between two coupled donors embedded in a silicon nanowire. By increasing the microwave frequency we observe a transition from incoherent to coherent driving revealed by the emergence of a Landau-Zener-Stückelberg quantum interference pattern of the measured current through the donors. This interference pattern is fitted to extract characteristic parameters of the double-donor system. In particular we estimate a charge dephasing time of 0.3±0.1  ns, comparable to other types of charge-based two-level systems. The demonstrated coherent coupling between two dopants is an important step towards donor-based quantum computing devices in silicon.

With the development of single-atom transistors, consisting of single dopants, nanofabrication has reached an extreme level of miniaturization. Promising functionalities for future nanoelectronic devices are based on the possibility of coupling several of these dopants to each other. This already allowed to perform spectroscopy of the donor state by d.c. electrical transport. The next step, namely manipulating a single electron over two dopants, remains a challenge. Here we demonstrate electron pumping through two phosphorus donors in series implanted in a silicon nanowire. While quantized pumping is achieved in the low-frequency adiabatic regime, we observe remarkable features at higher frequency when the charge transfer is limited either by the tunnelling rates to the electrodes or between the two donors. The transitions between quantum states are modelled involving a Landau–Zener transition, allowing to reproduce in detail the characteristic signatures observed in the non-adiabatic regime.

The collapsibility index of the inferior vena cava during a deep standardized inspiration is a simple, noninvasive bedside predictor of fluid responsiveness in nonintubated patients with sepsis-related acute circulatory failure.

We investigate the gate-induced onset of few-electron regime through the undoped channel of a silicon nanowire field-effect transistor. By combining low-temperature transport measurements and self-consistent calculations, we reveal the formation of one-dimensional conduction modes localized at the two upper edges of the channel. Charge traps in the gate dielectric cause electron localization along these edge modes, creating elongated quantum dots with characteristic lengths of ∼10 nm. We observe single-electron tunneling across two such dots in parallel, specifically one in each channel edge. We identify the filling of these quantum dots with the first few electrons, measuring addition energies of a few tens of millielectron volts and level spacings of the order of 1 meV, which we ascribe to the valley orbit splitting. The total removal of valley degeneracy leaves only a 2-fold spin degeneracy, making edge quantum dots potentially promising candidates for silicon spin qubits.

We measure a large valley-orbit splitting for shallow isolated phosphorus donors in a silicon gated nanowire. This splitting is close to the bulk value and well above previous reports in silicon nanostructures. It was determined using a double dopant transport spectroscopy which eliminates artifacts induced by the environment. Quantitative simulations taking into account the position of the donors with respect to the Si/SiO2 interface and electric field in the wire show that the values found are consistent with the device geometry.

BackgroundWhether the respiratory changes of the inferior vena cava diameter during a deep standardized inspiration can reliably predict fluid responsiveness in spontaneously breathing patients with cardiac arrhythmia is unknown.MethodsThis prospective two-center study included nonventilated arrhythmic patients with infection-induced acute circulatory failure. Hemodynamic status was assessed at baseline and after a volume expansion of 500 mL 4% gelatin. The inferior vena cava diameters were measured with transthoracic echocardiography using the bi-dimensional mode on a subcostal long-axis view. Standardized respiratory cycles consisted of a deep inspiration with concomitant control of buccal pressures and passive exhalation. The collapsibility index of the inferior vena cava was calculated as [(expiratory–inspiratory)/expiratory] diameters.ResultsAmong the 55 patients included in the study, 29 (53%) were responders to volume expansion. The areas under the ROC curve for the collapsibility index and inspiratory diameter of the inferior vena cava were both of 0.93 [95% CI 0.86; 1]. A collapsibility index ≥ 39% predicted fluid responsiveness with a sensitivity of 93% and a specificity of 88%. An inspiratory diameter < 11 mm predicted fluid responsiveness with a sensitivity of 83% and a specificity of 88%. A correlation between the inspiratory effort and the inferior vena cava collapsibility was found in responders but was absent in nonresponder patients.ConclusionsIn spontaneously breathing patients with cardiac arrhythmias, the collapsibility index and inspiratory diameter of the inferior vena cava assessed during a deep inspiration may be noninvasive bedside tools to predict fluid responsiveness in acute circulatory failure related to infection. These results, obtained in a small and selected population, need to be confirmed in a larger-scale study before considering any clinical application.Electronic supplementary materialThe online version of this article (10.1186/s13613-018-0427-1) contains supplementary material, which is available to authorized users.