Pauli blockade in a few-hole PMOS double quantum dot limited by spin-orbit interaction

Bohuslavskyi, Heorhii; Kotekar‐Patil, Dharmraj; Maurand, Romain; Corna, Andrea; Barraud, S.; Bourdet, L.; Hutin, Louis; Niquet, Yann-Michel; Jehl, X.; Franceschi, S. De; Vinet, M.; Sanquer, M.

doi:10.1063/1.4966946

Cited by 30 publications

(32 citation statements)

References 34 publications

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“…Measurements in Ge/Si samples suggest T 1 of hundreds of microseconds 34 to submicrosecond values 35 at B~1 T. In the Ge hut wire system, values of tens to a hundred microseconds were recorded for magnetic fields from 0.5 T to 1.5 T 36 . T 1 times of several microseconds in hole Si Complementary Metal Oxide Semiconductor (CMOS) devices 37 , and several nanoseconds in gated GaAs samples at similar fields 38 have been reported. Two-axis coherent control of the hole spin has been demonstrated both in the Ge hut sample 39 and in the Si dots 40 .…”

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confidence: 99%

Single hole spin relaxation probed by fast single-shot latched charge sensing

et al. 2019

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Hole spins have recently emerged as attractive candidates for solid-state qubits for quantum computing. Their state can be manipulated electrically by taking advantage of the strong spinorbit interaction (SOI). Crucially, these systems promise longer spin coherence lifetimes owing to their weak interactions with nuclear spins as compared to electron spin qubits. Here we measure the spin relaxation time T 1 of a single hole in a GaAs gated lateral double quantum dot device. We propose a protocol converting the spin state into long-lived charge configurations by the SOI-assisted spin-flip tunneling between dots. By interrogating the system with a charge detector we extract the magnetic-field dependence of T 1 ∝ B −5 for fields larger than B = 0.5 T, suggesting the phonon-assisted Dresselhaus SOI as the relaxation channel. This coupling limits the measured values of T 1 from~400 ns at B = 1.5 T up tõ 60 μs at B = 0.5 T.

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confidence: 99%

Single hole spin relaxation probed by fast single-shot latched charge sensing

et al. 2019

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“…The reason is that the larger spin-orbit interaction (SOI) of a hole (-like) spin enables the spin resonance by an oscillatory electric field, instead of a magnetic field, at microwave frequencies under typical sub-Tesla static magnetic fields. Such electrically-driven spin resonance (EDSR) has been demonstrated in III-V devices [20][21][22][23], as well as in Si [24][25][26], while SOI effects in gate-confined Si quantum dots have been investigated in the spin blockade region [27]. However, systematic investigations of EDSR * E-mail address: k-ono@riken.jp † these authors contributed equally to this work under the direct influence of SOI have not been performed in Si, the material that provides an ideal stage for studying SOI due to the minor presence of nuclear spins.…”

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confidence: 99%

Hole Spin Resonance and Spin-Orbit Coupling in a Silicon Metal-Oxide-Semiconductor Field-Effect Transistor

et al. 2017

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We study hole spin resonance in a p-channel silicon metal-oxide-semiconductor field-effect transistor. In the sub-threshold region, the measured source-drain current reveals a double dot in the channel. The observed spin resonance spectra agree with a model of strongly coupled two-spin states in the presence of a spin-orbit-induced anti-crossing. Detailed spectroscopy at the anticrossing shows a suppressed spin resonance signal due to spin-orbit-induced quantum state mixing. This suppression is also observed for multi-photon spin resonances. Our experimental observations agree with theoretical calculations.PACS numbers: 73.63. Kv, 73.23.Hk, The silicon-based metal-oxide-semiconductor fieldeffect transistor (MOSFET) is a key element of largescale integrated circuits that are at the core of modern technology. Looking into the future, a universal faulttolerant quantum computer also requires a huge number of physical qubits, on the order of 10 8 or more [1,2]. As such, a qubit integrated with the standard Si MOS-FET architecture would be truly attractive from the perspectives of scaling up and leveraging existing technologies. One example of such a qubit is the spin of an impulity/defect in the channel of a Si MOSFET. Indeed, spin qubits defined in Si nano-devices are not only compatible with current silicon technology, but are also known to be one of the most quantum coherent among known qubit designs [3][4][5][6][7][8][9][10][11][12][13].Although there are many studies of impurities and defects in Si [14], single impurity/defect in the channel of a Si MOSFET has only recently been studied experimentally, by single-electron tunneling [15][16][17][18][19]. Spins of such defects are difficult to characterize because of their weakly-interacting nature. Controlling the spins of impurities in a MOSFET, as well as in a gate-confined quantum dot, can be achieved much more easily in a pchannel MOSFET than an n-channel. The reason is that the larger spin-orbit interaction (SOI) of a hole (-like) spin enables the spin resonance by an oscillatory electric field, instead of a magnetic field, at microwave frequencies under typical sub-Tesla static magnetic fields. Such electrically-driven spin resonance (EDSR) has been demonstrated in III-V devices [20][21][22][23], as well as in Si [24][25][26], while SOI effects in gate-confined Si quantum dots have been investigated in the spin blockade region [27]. However, systematic investigations of EDSR * E-mail address: k-ono@riken.jp † these authors contributed equally to this work under the direct influence of SOI have not been performed in Si, the material that provides an ideal stage for studying SOI due to the minor presence of nuclear spins.In this work we study sub-threshold transport and EDSR in a short p-channel Si MOSFET, and quantitatively reveal the effects of SOI and EDSR on lifting the spin blockade. Specifically, our transport measurements demonstrate that there are two effective dots in the channel, which allow us to identify a spin blockade regime and explore spin reso...

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“…3. We speculate that the interdot tunnel coupling as well as the couplings to the leads are not the same in the two regimes, as the three adjacent gates have relatively strong cross coupling to each other and even slight changes on them can reshape the double quantum dot configuration.A zero-field dip in the leakage current is known to occur in double dots hosted in materials with strong spin-orbit interaction 6,8,[33][34][35] . The dip is usually explained in terms of a competition between different types of spin-mixing processes: The combination of spin-orbit interaction and Zeeman splitting due to the applied field enables transitions between triplet and singlet configurations.…”

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confidence: 99%

Magnetic field evolution of spin blockade in Ge/Si nanowire double quantum dots

Zarassi

Danon

et al. 2017

Phys. Rev. B

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We perform transport measurements on double quantum dots defined in Ge/Si core/shell nanowires and focus on Pauli spin blockade in the regime where tens of holes occupy each dot. We identify spin blockade through the magnetic field dependence of leakage current. We find both a dip and a peak in the leakage current at zero field. We analyze this behavior in terms of the quantum dot parameters such as coupling to the leads, interdot tunnel coupling as well as spin-orbit interaction. We find a lower bound for spin-orbit interaction with lso = 500 nm. We also extract large and anisotropic effective Landé g-factors, with larger g-factors in the direction perpendicular to the nanowire axis in agreement with previous studies and experiments but with larger values reported here.Studies of spin blockade in quantum dots are largely motivated by the proposals to build a spin-based quantum computer 1 , as spin blockade can be used for qubit initialization and readout 2,3 . At the same time, spin blockade and its lifting mechanisms offer a direct insight into spin relaxation and dephasing processes in semiconductors and provide deeper understanding of interactions between spin localized in a quantum dot and its environment, be it the lattice and its vibrations or nuclear spins, spin-orbit interaction, or coupling to spins in nearby dots or in the lead reservoirs 4-8 .Holes in Ge/Si nanowires offer a relatively unexplored platform for such studies 9 . On the one hand, hyperfine interaction is expected to be greatly reduced owing to the low abundance of nonzero nuclear spin isotopes in the group IV materials 10 . Moreover, holes weakly couple to nuclear spins due to their p-wave Bloch wave symmetry, thus they are expected to come with longer spin relaxation times 11 . Heavy/light hole degeneracy may also influence the spin blockade regime 12 . On the other hand, spin-orbit interaction is predicted 13 and suggested by experiments 14-17 to be strong in Ge/Si core/shell nanowires. This offers a path to electrical spin manipulation 18,19 , as well as to realizing Majorana fermions [20][21][22][23] .In this work we perform transport measurements on electrostatically defined double quantum dots 2 made in Ge/Si core/shell nanowires, and detect Pauli spin blockade at several charge degeneracy points. We expand and adapt a previously developed rate equation model to analyze the magnetic-field evolution of the leakage current 24 . We also observe large and anisotropic g-factors in these dots, which supports recent theoretical predictions 25 and experimental observations 26,27 .The devices are fabricated on n-doped Si substrates covered with 500 nm of thermal SiO 2 and patterned with local gate arrays of Ti/Au stripes with center to center distance of 60 nm. The gates are covered by a 10 nm layer of HfO 2 dielectric. Using a micromanipulator 28 the nanowires with a typical length of 4 µm and diameter of 30 nm are placed on top of these gates as shown in the inset of Fig. 1. After wet etching with buffered hydrofluoric acid, we sputter 15...

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Pauli blockade in a few-hole PMOS double quantum dot limited by spin-orbit interaction

Cited by 30 publications

References 34 publications

Single hole spin relaxation probed by fast single-shot latched charge sensing

Single hole spin relaxation probed by fast single-shot latched charge sensing

Hole Spin Resonance and Spin-Orbit Coupling in a Silicon Metal-Oxide-Semiconductor Field-Effect Transistor

Magnetic field evolution of spin blockade in Ge/Si nanowire double quantum dots

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