FeRAM technology for high density applications

Mikolajick, Thomas; Dehm, C.; Hartner, W.; Kasko, I.; Kastner, Markus; Nagel, N.; Moert, Manfred; Mazuré, C.

doi:10.1016/s0026-2714(01)00049-x

Cited by 145 publications

(83 citation statements)

References 5 publications

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“…The properties of two wellknown perovskite ferroelectrics, Lead Zirconate Titanate (PZT) and Strontium Barium Titanate (SBT), is compared with Si:HfO 2 in Table 1. The recently discovered ferroelectric thin film, Si:HfO 2 [28,6], has a relatively high coercive field that ensures a large memory window [29][30][31][32][33][34][35][36][37][38][39].…”

Section: Ferroelectric Materialsmentioning

confidence: 99%

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Modeling and simulation of low power ferroelectric non-volatile memory tunnel field effect transistors using silicon-doped hafnium oxide as gate dielectric

Saeidi

Biswas

Ionescu

2016

Solid-State Electronics

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a b s t r a c tThe implementation and operation of the nonvolatile ferroelectric memory (NVM) tunnel field effect transistors with silicon-doped HfO 2 is proposed and theoretically examined for the first time, showing that ferroelectric nonvolatile tunnel field effect transistor (Fe-TFET) can operate as ultra-low power nonvolatile memory even in aggressively scaled dimensions. A Fe-TFET analytical model is derived by combining the pseudo 2-D Poisson equation and Maxwell's equation. The model describes the Fe-TFET behavior when a time-dependent voltage is applied to the device with hysteretic output characteristic due to the ferroelectric's dipole switching. The theoretical results provide unique insights into how device geometry and ferroelectric properties affect the Fe-TFET transfer characteristic. The recently explored ferroelectric, silicon-doped HfO 2 is employed as the gate ferroelectric. With the ability to engineer ferroelectricity in HfO 2 thin films, a high-K dielectric well established in memory devices, the silicon-doped HfO 2 opens a new route for improved manufacturability and scalability of future 1-T ferroelectric memories. In the current research, a Si:HfO 2 based Fe-TFET with large memory window and low power dissipation is designed and simulated. Utilizing our presented model, the device characteristics of a Fe-TFET that takes full benefits from Si:HfO 2 is compared with the same devices using well-known perovskite ferroelectrics. Finally, the Fe-TFET is compared with a conventional ferroelectric memory transistor highlighting the advantages of using tunneling memory devices.

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Section: Ferroelectric Materialsmentioning

confidence: 99%

“…Due to the large number of defects, leakage current, and large lattice mismatch between perovskite ferroelectrics and silicon, it is always necessary to use a buffer layer with a proper interface Table 1 The ferroelectric properties of PZT [29][30][31][32], SBT [33][34][35][36][37][38][39], and Si:HfO 2 [28]. with the substrate.…”

Section: Buffer Layermentioning

confidence: 99%

Modeling and simulation of low power ferroelectric non-volatile memory tunnel field effect transistors using silicon-doped hafnium oxide as gate dielectric

Saeidi

Biswas

Ionescu

2016

Solid-State Electronics

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“…However, when the bias is removed, the polarization disappears, unless ferroelectric materials are used. Ferroelectric materials show a remanent polarization after removal of the electric field [143]. The direction (up or down) of the remanent polarization can be exploited to make a memory bit.…”

Section: Ferroelectric Memoriesmentioning

confidence: 99%

Present and Future Non-Volatile Memories for Space

Gerardin

Paccagnella

2010

IEEE Trans. Nucl. Sci.

138

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We discuss non-volatile memories (NVM) for space applications. The focus will be both on technologies and devices aimed at the mainstream commercial markets and on rad-hard devices. Commercial NVMs are very attractive for space designers due to their large size (tens of Gbits), even though they have several issues related to ionizing radiation. Rad-hard NVMs offer radiation hardness, but are available only in small size (few Mbits). Most of the emphasis in this review paper will be on the current dominant technology in the mainstream market: floating gate flash memories. A comprehensive discussion of total dose and single event effects results for a wide cross section of NVMs will be presented. Finally, we will conclude with a cursory glance at other emerging non-volatile technologies.Index Terms-Ferroelectric devices, flash memory, magnetoresistive devices, nonvolatile memory, phase change memory, radiation effects. I. OVERVIEWN ON-VOLATILE memories (NVMs) are used in a variety of space applications, as data or code memories, and are increasingly needed for future missions. This paper will discuss the technologies and devices available for non-volatile storage in the mainstream and in the rad-hard market, with a strong attention to the radiation sensitivity, which is of primary importance for harsh environments such as space.The work is organized as follows: we will first introduce the basic definitions and metrics concerning NVMs, then explore and compare the major storage concepts. In particular, charge-based, phase-change, ferroelectric, and magnetoresistive memories will be presented, with emphasis on density, performance, reliability, and radiation sensitivity. Architectural information concerning the array organization and peripheral circuitry will be given, highlighting known radiation issues and critical building blocks. A. Key Definitions and MetricsA non-volatile memory is a memory that retains information when powered off. Different terms are used to indicate the act of storing a digital value in a non-volatile memory bit, depending on the memory type and architecture. In charge-based storage, the terms program and erase are used to indicate the injection of Manuscript negative charge into and its removal from (or injection of positive charge into) the charge storage element, respectively. In the context of phase change memories, the terms set and reset are used to indicate the operations leading to the crystallization and amorphization of the phase-change material. For other memories, such as ferroelectric or magnetic, the term write is simply used, as for SRAMs and DRAMs. The association of these operations and terms with the stored digital value ("0" or "1") is arbitrary. In the following we will stick to the conventions most commonly used for each memory type.In addition to familiar parameters such as speed, power consumption, and density, two additional metrics are of main importance for non-volatile memories: retention and endurance. This is because wear-out is usually much stronger in non-volat...

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“…Perovskite insulators have attracted particular attention for applications such as ferroelectric random access memories (FeRAM), 1 dynamic RAM, 2 and alternative gate materials for metal oxide semiconductor field effect transistors (MOSFETs). 3 A recent review details their short-term and future prospects for the nanoelectronics industry, further proof of the need to integrate this promising material in next generation devices.…”

Section: Introductionmentioning

confidence: 99%

Ferroelectric properties in thin film barium titanate grown using pulsed laser deposition

Appleby

Ponon

Kwa

et al. 2014

Journal of Applied Physics

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The characteristics of polycrystalline BaTiO3 metal-insulator-metal capacitors, fabricated using pulsed laser deposition, are investigated from room temperature to 420 K. The capacitance–voltage characteristics show ferroelectric behaviour at room temperature, with a phase transition to paraelectric at higher temperature. However, the permittivity response shows paraelectric behaviour across all measured temperatures. So BaTiO3 exists here in a mixture of cubic and tetragonal phases. The BaTiO3 films have a columnar structure, with grain size increasing with film thickness due to their increasing height but not diameter. This correlates with an increase in remnant polarization. The results support a size driven phase transition in thin films of polycrystalline BaTiO3.

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FeRAM technology for high density applications

Cited by 145 publications

References 5 publications

Modeling and simulation of low power ferroelectric non-volatile memory tunnel field effect transistors using silicon-doped hafnium oxide as gate dielectric

Modeling and simulation of low power ferroelectric non-volatile memory tunnel field effect transistors using silicon-doped hafnium oxide as gate dielectric

Present and Future Non-Volatile Memories for Space

Ferroelectric properties in thin film barium titanate grown using pulsed laser deposition

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