Ferroelectric properties in thin film barium titanate grown using pulsed laser deposition

Abstract

The characteristics of polycrystalline BaTiO3 metal-insulator-metal capacitors, fabricated using pulsed laser deposition, are investigated from room temperature to 420 K. The capacitance–voltage characteristics show ferroelectric behaviour at room temperature, with a phase transition to paraelectric at higher temperature. However, the permittivity response shows paraelectric behaviour across all measured temperatures. So BaTiO3 exists here in a mixture of cubic and tetragonal phases. The BaTiO3 films have a columnar structure, with grain size increasing with film thickness due to their increasing height but not diameter. This correlates with an increase in remnant polarization. The results support a size driven phase transition in thin films of polycrystalline BaTiO3.

Enhanced resistive switching characteristics in Pt/BaTiO3/ITO structures through insertion of HfO2:Al2O3 (HAO) dielectric thin layer

“…The Pt/BTO/ITO structure exhibits rather symmetric hysteresis loops with an average P r of 8.9 μC/cm 2 , P s of 9.7 μC/cm 2 and E c of 64.2 kV/cm. The obtained P r value is higher than the values found in literature for polycrystalline BTO thin films grown by pulsed laser deposition (PLD) method 20 , which can be explained by the highly ( 111 )-oriented texture of BTO films. This is in good agreement with literature 31 32 .…”

“…The absence of Al 2 O 3 peaks in XRD could be due to its amorphous nature. The presence of clear splitting of the BTO ( 200 ) peak around 2θ ≈ 44.5° in Pt/BTO confirms the tetragonal symmetry of the BTO layer at room temperature20. The extended scans of GIXRD around 2θ ≈ 44.5° are shown in Fig.…”

Ba0.6Sr0.4TiO3 Thin Films Deposited by Spray Coating for High Capacitance Density Capacitors

“…The C – V behavior of the MIM capacitors based on the as deposited BST film reported in Figure , is in good agreement with results reported in literature on MIM capacitors based on non‐linear insulating material . The demonstrated capacitance density reaches 0.9 μF cm −2 at 0.4 V (curve without annealing).…”

Magnetoelectric micromachines with wirelessly controlled navigation and functionality

“…This can be confirmed by our PFM measurements ( Figure S3) as well as by the results reported in other work. 53 The non-uniform distribution of both magnetostrictive and piezoelectric domains results in a random distribution of ME active sites. Third, differences in the ME layer thickness on the microsphere also contribute to the non-uniform distribution of ME active sites.…”