Enhanced resistive switching characteristics in Pt/BaTiO3/ITO structures through insertion of HfO2:Al2O3 (HAO) dielectric thin layer

Abstract

An enhanced resistive switching (RS) effect is observed in Pt/BaTiO3(BTO)/ITO ferroelectric structures when a thin HfO2:Al2O3 (HAO) dielectric layer is inserted between Pt and BTO. The P-E hysteresis loops reveal the ferroelectric nature of both Pt/BTO/ITO and Pt/HAO/BTO/ITO structures. The relation between the RS and the polarization reversal is investigated at various temperatures in the Pt/HAO/BTO/ITO structure. It is found that the polarization reversal induces a barrier variation in the Pt/HAO/BTO interface and causes enhanced RS, which is suppressed at Curie temperature (Tc = 140 °C). Furthermore, the Pt/HAO/BTO/ITO structures show promising endurance characteristics, with a RS ratio >103 after 109 switching cycles, that make them potential candidates for resistive switching memory devices. By combining ferroelectric and dielectric layers this work provides an efficient way for developing highly efficient ferroelectric-based RS memory devices.

Morphological, optical and photovoltaic characteristics of MoSe2/SiOx/Si heterojunctions

“…To perform the photovoltaic characterization, indium tin oxide (ITO) top electrodes with a diameter of 1 mm were deposited by ion-beam sputtering deposition (IBSD), as described in ref. 41 , while Aluminium electrodes were attached to the Si wafer backside by electric spark. Current-voltage (I-V) characteristics, both in the dark and under light illumination, with a maximum power density of 100 mWcm −2 (AM 1.5 G) were investigated.…”

Correlation of crystal structure and optical properties of Ba0.97Nd0.0267Ti(1-x)WxO3 perovskite

“…3 Furthermore, most research studies have concentrated on the Nd 3+ ions due to their efficient infrared emissions by the three transitions 4 F 3/2 / 4 I 9/2 , 4 F 3/2 / 4 I 11/2 and 4 F 3/2 / 4 I 13/2 with emissions at wavelengths around 946, 1064 and 1350 nm which nds potential applications in the elds of laser and infrared optical communications. 4 Indeed, many studies have demonstrated an appreciable enhancement of the spectral analysis of Nd 3+ ions. G. Singh et al 5 reports that the emissions of neodymium in lead lanthanum zirconate titanate (Pb 0.91 La 0.08 (Zr 0.65 Ti 0.35 ) 0.98 O 3 ) have been extensively studied owing to their excellent luminescence properties and proper energy separation towards a potential application in the elds of laser and infrared optical communications.…”

Enhanced bipolar resistive switching behavior in polar Cr-doped barium titanate thin films without electro-forming process

“…The diffraction peaks at 31.5 0 and 31.6 0 corresponded to (110) and (110) planes, 33 respectively. The weak diffraction patterns of CrBTO are shown in the inset of Fig 1(a) which may be due to a nanoscale thickness of films which was hard to detect by powder XRD machine.…”

“…Here, the work function of the top Au electrode and bottom ITO electrode is 5.1 eV and 4.5 eV. 37 The electron affinity and energy band gap of the CrBTO is used as 3.8 eV and 3.4 eV, respectively 38 which are obtained from earlier reports. On the pristine device, the potential barrier height is ∼1.3 eV.…”