Fabrication and characterization of photosensitive n-ZnO/p-InSe heterojunctions

Chemical bonding within AIIIBVI materials under uniaxial compression

“…11,12 InSe has been extensively used in many applications, particularly in optics. 13,14 GaTe has been studied for its potential applications in optoelectronics, photochemistry, and thermoelectricity due to its low thermal conductivity. 15,16 Significant structural changes, such as the collapse or reconfiguration of a vdW gap, can cause properties to switch, leading to interesting effects.…”

Photosensitive n-Zn0.5Cd0.5O/p-InSe Heterostructures Prepared by Magnetron Sputtering

“…In addition, heterostructures formed by deposition of ZnO and CdO films on different semiconducting substrates show promising photosensitive properties [8][9][10].…”

Charge Carrier Transport in Van Der Waals Semiconductor InSe Intercalated with RbNO3 Probed by Direct Current Methods

“…In particular, intercalation could be used as an effective method to introduce new functionalities or enhance the existing parameters of a promising class of semiconducting vdW crystals known as metal monochalcogenides, such as InSe, GaSe, etc. In the pristine form, these crystals have recently emerged as an excellent material base not only for quantum science, but also for a wide range of innovative technologies, including quantum metrology, high broadband photosensors, light-emitting diodes, resonant tunnelling transistors with multiple regions of negative differential conductance, and field-effect transistors (FETs) with high electron mobility exceeding that of silicon-based FETs [6][7][8][9][10][11][12][13][14][15][16].…”