Electrical conductivity along and across the layers, its anisotropy, and the Hall effect for undoped and annealed Te‐doped samples of InSe are investigated in the temperature range 80 to 400 K. Variations of electrical parameters of annealed samples are determined during the relaxation process. It is established that peculiarities of the annealing effect as well as the relaxation process in annealed samples are induced by the presence of interlayer impurity precipitates of In atoms adsorbed by stacking faults. High values of the anisotropy ratio in n‐InSe and its activated character below 250 K are caused by these impurity aggregates.

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Scattering mechanisms in undoped n-type indium monoselenide have been studied in the temperature range between 80 and 400 K. The experimental data were obtained from Hall and photo-Hall effects. It is shown that in the samples with low room temperature Hall mobility (m H 600 to 750 cm 2 /Vs) the temperature dependence of m H (T) can be explained by electron scattering on charged impurity aggregates surrounded by space-charge regions. Under illumination the neutralization of the effective charge of impurity aggregates by photo-excited carriers is the reason for the predominant electron scattering on homopolar optical phonons A H 1g .

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