Electrical conductivity along and across the layers, its anisotropy, and the Hall effect for undoped and annealed Te‐doped samples of InSe are investigated in the temperature range 80 to 400 K. Variations of electrical parameters of annealed samples are determined during the relaxation process. It is established that peculiarities of the annealing effect as well as the relaxation process in annealed samples are induced by the presence of interlayer impurity precipitates of In atoms adsorbed by stacking faults. High values of the anisotropy ratio in n‐InSe and its activated character below 250 K are caused by these impurity aggregates.
Scattering mechanisms in undoped n-type indium monoselenide have been studied in the temperature range between 80 and 400 K. The experimental data were obtained from Hall and photo-Hall effects. It is shown that in the samples with low room temperature Hall mobility (m H 600 to 750 cm 2 /Vs) the temperature dependence of m H (T) can be explained by electron scattering on charged impurity aggregates surrounded by space-charge regions. Under illumination the neutralization of the effective charge of impurity aggregates by photo-excited carriers is the reason for the predominant electron scattering on homopolar optical phonons A H 1g .
Photoelectric properties of vertical ionotronic nanostructures based on layered semiconductor InSe and ionic salt RbNO3 are investigated. It is shown that the nanostructures consisting of 2D InSe layers, ultrathin layers of In2O3 oxide, and ionic salt ring‐shaped nanostructures, which are located in the (0001) planes of InSe crystal and periodically along its crystallographic C axis, have a high photosensitivity.
The electrical properties of n‐InSe single crystals irradiated with 9.2‐MeV electrons are investigated in the temperature range 80–400 K. The observed extrema in the temperature dependences of the Hall coefficient and the electron mobility are explained by assuming the existence of mixed conduction with the carriers in the 3D conduction band and 2D electron gas. The numerical calculations were carried out by taking into account a redistribution of the carriers between the conduction band and the states of a 2D electron gas and well reproduce the experimental data. A numerical analysis of the temperature dependences of the concentration of 3D electrons within the single donor–single acceptor model and that of the Fermi‐level temperature dependences have shown that n‐InSe irradiated with high‐energy electrons is highly compensated (NA/ND = 0.988–0.998) with a concentration of the donors ND = (0.69–1.2) × 1017 cm−3 and the activation energy of three‐dimensional conduction is 93–139 meV.
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