Surface structure of unoxidized and oxidized Bi2Se3 crystals

Ivanov, V. I.; Katerynchuk, V. M.; Kaminskii, V. M.; Kovalyuk, Z. D.; Lytvyn, O. S.; Mintyanskii, I. V.

doi:10.1134/s0020168510120046

Cited by 6 publications

(7 citation statements)

References 4 publications

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“…Contrary to an earlier report on the hillock-type micromorphology of cleaved Bi 2 Se 3 (0001) surface, 28 no such structures were observed in our experiment. An example of AFM pattern recorded for the field of 3 Â 3 μm 2 with terraces is shown in Figure 4.…”

Section: ' Results and Discussioncontrasting

confidence: 99%

“…On the one hand, there are reports on swift oxidation of Bi 2 Se 3 (0001) surface in air at ambient and increased temperatures. 28,29 On the other hand, layered halcogenide crystals generally display a pronounced chemical inertness of the cleaved surface. For example, the cleaved Se-terminated optical-quality surface of GaSe crystal is long-living in air and widely applied in nonlinear optical devices.…”

Section: ' Introductionmentioning

confidence: 99%

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Formation of Inert Bi₂Se₃(0001) Cleaved Surface

Atuchin

Golyashov

Кох

et al. 2011

Crystal Growth & Design

118

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A high quality inclusion-free Bi2Se3 crystal has been grown by the Bridgman method with the use of a rotating heat field. A large-area atomically flat Bi2Se3(0001) surface of excellent crystallographic quality has been formed by cleavage. Chemical and microstructural properties of the surface have been evaluated with reflection high-energy electron diffraction, atomic force microscopy (AFM), scanning tunneling microscopy (STM), spectroscopic ellipsometry, and X-ray photoelectron spectroscopy. There was no Bi2Se3(0001) surface oxidation detected after over a month in air under ambient conditions as shown by comparative core level spectroscopy, AFM, and STM.

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Section: ' Results and Discussioncontrasting

confidence: 99%

Section: ' Introductionmentioning

confidence: 99%

Formation of Inert Bi₂Se₃(0001) Cleaved Surface

Atuchin

Golyashov

Кох

et al. 2011

Crystal Growth & Design

118

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“…It is therefore expected that more energetic oxygen species may cause stronger oxidation effects on the Bi 2 Se 3 surface. Yet, most investigations regarding the oxidation of Bi 2 Se 3 focus on the structure and effects of the native oxide. ,, Extensive oxidation of Bi 2 Se 3 has only been observed from Bi 2 Se 3 crystals annealed in air at 450 °C . In this study, we show that the surface oxide on Bi 2 Se 3 can be grown in a controllable manner using oxygen plasma.…”

Section: Introductionmentioning

confidence: 71%

“…10,12,13 Extensive oxidation of Bi 2 Se 3 has only been observed from Bi 2 Se 3 crystals annealed in air at 450 °C. 14 In this study, we show that the surface oxide on Bi 2 Se 3 can be grown in a controllable manner using oxygen plasma.…”

Section: ■ Introductionmentioning

confidence: 72%

Growth of the Bi₂Se₃ Surface Oxide for Metal–Semiconductor–Metal Device Applications

Yeh¹,

Ho²,

Wen

et al. 2016

J. Phys. Chem. C

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The effect of the surface structure of Bi2Se3 on its interior properties has been well studied recently, but the interfacial structure and electrical properties of the oxidized Bi2Se3 surface are little known. In contrast to the self-limited formation of native oxide on Bi2Se3, the degree of oxidation on the Bi2Se3 surface in oxygen plasma is enhanced. Results of transmission electron microscopy and X-ray photoelectron spectroscopy show that the surface of the oxidized Bi2Se3 is composed of a layer of amorphous bismuth oxide (BiO x ), and the thickness of the BiO x layer can be controlled by the length of the plasma process. Electrical measurements of this structure present the Schottky-type transport property at the interface between the oxidized layer and the bulk Bi2Se3 crystal, and the turn-on voltage depends on the thickness of the surface BiO x layer. This study of the structure, formation mechanism, and electrical properties of the surface oxide of Bi2Se3 formed in oxygen plasma provides useful information for future development of electronic devices based on bismuth chalcogenides.

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“…In fact, the formation of surface oxide layer is inevitable during the preparation of materials and devices. The intentionally growing oxide insulator layers can significantly improve the photoelectric characteristics of solar cells19. Plasma post-treatment technology has been one of the central techniques for thinning the layered materials to a desired thickness and further improve their properties20.…”

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confidence: 99%

Morphological evolution of self-deposition Bi2Se3 nanosheets by oxygen plasma treatment

Jia

Wang

et al. 2016

Sci Rep

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Bi2Se3 nanosheets were successfully synthesized by a microwave-assisted approach in the presence of polyvinylpyrroli done at a temperature of 180 °C for 2 h. The thin film was prepared on a silicon wafer via a self-deposition process in a Bi2Se3 nanosheet ink solution using the evaporation-induced self-assembly method. The structure and morphology of the obtained products were characterized by X-ray diffraction, scanning electron microscopy (SEM), x-ray photoelectron spectroscopy, and Raman spectroscopy. The highly uniform Bi2Se3 particles could be formed by controlling the oxygen plasma treatment time. After the plasma pretreatment from 10 to 20 s, the surface of Bi2Se3 film evolved from the worm-like structure to particles. The highly uniform thin film was formed on further increasing the plasma treatment time, which is consistent with the observed SEM results. Several important processes can result in the morphological evolution of Bi2Se3 nanosheets: (1) formation of Bi2Se3 oxide layer; (2) self-assembly of oxide nanoparticles under the action of high-energy oxygen plasma; and (3) electrostatic interaction and etching mechanism.

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Surface structure of unoxidized and oxidized Bi2Se3 crystals

Cited by 6 publications

References 4 publications

Formation of Inert Bi₂Se₃(0001) Cleaved Surface

Formation of Inert Bi₂Se₃(0001) Cleaved Surface

Growth of the Bi₂Se₃ Surface Oxide for Metal–Semiconductor–Metal Device Applications

Morphological evolution of self-deposition Bi2Se3 nanosheets by oxygen plasma treatment

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Surface structure of unoxidized and oxidized Bi2Se3 crystals

Cited by 6 publications

References 4 publications

Formation of Inert Bi2Se3(0001) Cleaved Surface

Formation of Inert Bi2Se3(0001) Cleaved Surface

Growth of the Bi2Se3 Surface Oxide for Metal–Semiconductor–Metal Device Applications

Morphological evolution of self-deposition Bi2Se3 nanosheets by oxygen plasma treatment

Contact Info

Product

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Formation of Inert Bi₂Se₃(0001) Cleaved Surface

Formation of Inert Bi₂Se₃(0001) Cleaved Surface

Growth of the Bi₂Se₃ Surface Oxide for Metal–Semiconductor–Metal Device Applications