The effect of the surface structure
of Bi2Se3 on its interior properties has been
well studied recently, but the
interfacial structure and electrical properties of the oxidized Bi2Se3 surface are little known. In contrast to the
self-limited formation of native oxide on Bi2Se3, the degree of oxidation on the Bi2Se3 surface
in oxygen plasma is enhanced. Results of transmission electron microscopy
and X-ray photoelectron spectroscopy show that the surface of the
oxidized Bi2Se3 is composed of a layer of amorphous
bismuth oxide (BiO
x
), and the thickness
of the BiO
x
layer can be controlled by
the length of the plasma process. Electrical measurements of this
structure present the Schottky-type transport property at the interface
between the oxidized layer and the bulk Bi2Se3 crystal, and the turn-on voltage depends on the thickness of the
surface BiO
x
layer. This study of the
structure, formation mechanism, and electrical properties of the surface
oxide of Bi2Se3 formed in oxygen plasma provides
useful information for future development of electronic devices based
on bismuth chalcogenides.
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