Formation of Inert Bi<sub>2</sub>Se<sub>3</sub>(0001) Cleaved Surface

Atuchin, Victor V.; Golyashov, V. A.; Кох, К. А.; Корольков, И. В.; Кожухов, А. С.; Кручинин, В. Н.; Makarenko, S. V.; Pokrovsky, L.D.; Prosvirin, Igor P.; Romanyuk, Konstantin; Tereshchenko, O. E.

doi:10.1021/cg201163v

Cited by 118 publications

(73 citation statements)

References 67 publications

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“…We did not observe any states at the Fermi level related to the conduction band in the spectra using a wide range of photon energies including 21.2 eV. The surface stability can be explained by the low concentration of surface defects in our samples grown by modified Bridgman method [42,43]. The energy shift of the Dirac point toward the Fermi level with time can be related to the adsorption of the residual oxygen-contained gases at the surface, in contrast to the case of CO adsorption which leads to a shift of the Dirac point in the opposite direction [31].…”

Section: Electronic and Spin Structurementioning

confidence: 73%

Electronic and spin structure of the topological insulator Bi2Te2.4Se0.6

et al. 2014

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High-resolution spin-and angle-resolved photoemission spectroscopy measurements were performed on the three-dimensional topological insulator Bi 2 Te 2.4 Se 0.6 , which is characterized by enhanced thermoelectric properties. The Fermi level position is found to be located in the bulk energy gap independent of temperature and it is stable over a long time. Spin textures in the Dirac-cone state at energies above and below the Dirac point as well as in the Rashba-type valence band surface state are observed in agreement with theoretical prediction. The calculations of the surface electronic structure demonstrate that the fractional stoichiometry induced disorder within the Te/Se sublattice does not influence the Dirac-cone state dispersion. In spite of relatively high resistivity, temperature dependence of conductivity shows a weak metallic behavior that could explain the effective thermoelectric properties of the Bi 2 Te 2.4 Se 0.6 compound with the in-plane Seebeck coefficient reaching −330 μV/K at room temperature.

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Section: Electronic and Spin Structurementioning

confidence: 73%

Electronic and spin structure of the topological insulator Bi2Te2.4Se0.6

et al. 2014

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“…An energetically favored heterostructure, Bi2Se3 (1×1)/Ag (1×1), with the selenium termination is adopted [37][38][39]. The ion-electron, electron-electron and van der Waals (vdW) interactions between Ag and Bi2Se3 are included in our model implemented in the Vienna ab initio simulation package (VASP) [24,40,41].…”

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confidence: 99%

Efficient charge-spin conversion and magnetization switching through the Rashba effect at topological-insulator/Ag interfaces

Shi

Wang

et al. 2018

Phys. Rev. B

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We report the observation of efficient charge-to-spin conversion in the three-dimensional topological insulator (TI) Bi2Se3 and Ag bilayer by the spin-torque ferromagnetic resonance technique. The spin orbit torque ratio in the Bi2Se3/Ag/CoFeB heterostructure shows a significant enhancement as the Ag thickness increases to ~2 nm and reaches a value of 0.5 for 5 nm Ag, which is ~3 times higher than that of Bi2Se3/CoFeB at room temperature. The observation reveals the interfacial effect of Bi2Se3/Ag exceeds that of the topological surface states (TSS) in the Bi2Se3 layer and plays a dominant role in the charge-to-spin conversion in the Bi2Se3/Ag/CoFeB system. Based on the first-principles calculations, we attribute our observation to the large Rashba-splitting bands which wrap the TSS band and has the same net spin polarization direction as TSS of Bi2Se3.Subsequently, we demonstrate for the first time the Rashba induced magnetization switching in Bi2Se3/Ag/Py with a low current density of 5 5.8 10  A/cm 2 .

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“…Prior any experimental measurement, powders were compacted into relatively thin pellets by cold pressing under Ar atmosphere. The depth profiling of Y 2 O 3 samples was performed by alternating Ar + ion sputtering and bombardment with XPS data acquisition and analysis [34][35][36]. Energy of Ar + ions, current density, and angle of sputtering-induced erosion were set equal to 1.05 keV, 4-5 A cm −2 , and 45 • respectively.…”

Section: Experimental Methodologymentioning

confidence: 99%