Photosensitive n-Zn0.5Cd0.5O/p-InSe Heterostructures Prepared by Magnetron Sputtering

Kudrynskyi, Z. R.; Tkachuk, I.G.; Ivanov, V. I.; Khomyak, V. V.

doi:10.21272/jnep.13(5).05002

Cited by 2 publications

(2 citation statements)

References 10 publications

(10 reference statements)

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“…This work is a continuation of research into the possibilities of constructing heterojunctions based on the contact of the InSe layered semiconductor with other semiconductors. We have already produced photosensitive heterojunctions on FeS2/InSe [8], Zn0.5Cd0.5O/InSe [9], SnS2/InSe [10] and CuFeO2/InSe [11], which show good straightening properties.…”

Section: Introductionmentioning

confidence: 99%

Photoelectric Properties of the Mn2O3/n-InSe Heterojunction

Tkachuk¹,

Orletskii²,

Ivanov³

et al. 2023

J. Nano- Electron. Phys.

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Photosensitive Mn2O3/n-InSe heterojunctions were produced by the method of low-temperature spray pyrolysis. An aqueous solution of the appropriate composition was sprayed onto a heated substrate made of a layered n-InSe crystal. As a result, a thin film of Mn2O3 was formed on its surface. The use of layered semiconductors makes it possible to obtain high-quality interfaces, even with significant differences in the crystal lattice parameters of the contacting materials. The front layer of the wide-gap semiconductor Mn2O3 is transparent in the region of maximum light absorption in InSe. This makes it possible to effectively exploit the photovoltaic properties of the latter. The photoelectric and optical properties of the obtained heterojunction were studied, the corresponding graphical dependences were constructed: current-voltage characteristics and differential resistance at different temperatures, temperature dependence of the height of the potential barrier, spectral dependence of the relative quantum efficiency in the photon energy range of 1.2÷3.2 eV. Theoretical models describing the obtained results are proposed. Based on the analysis of the temperature dependences of the direct and reverse branches of the current-voltage characteristics, the energy parameters of the heterojunction were determined. The value of the series and shunt resistances was evaluated. The mechanisms of the formation of forward and reverse currents through the Mn2O3/n-InSe energy barrier are determined.

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Section: Introductionmentioning

confidence: 99%

Photoelectric Properties of the Mn2O3/n-InSe Heterojunction

Tkachuk¹,

Orletskii²,

Ivanov³

et al. 2023

J. Nano- Electron. Phys.

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“…Thin films of transparent conductive oxides are widely used in various devices such as flat panel displays, touch panels and solar panels. It is known that heterojunctions based on such oxides and InSe have good rectifying properties and photosensitivity [4,9,10]. Delafossites are triple oxides of copper and iron with the basic formula ABO2, where A represents monovalent cations, such as Cu or Ag, and B represents trivalent metals from Al to La.…”

Section: Introductionmentioning

confidence: 99%

Photosensitive CuFeO2/n-InSe Heterojunctions

Tkachuk¹,

Orletskii²,

Ivanov³

et al. 2022

J. Nano- Electron. Phys.

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Photosensitive anisotypic CuFeO2/n-InSe heterojunctions were fabricated by the method of lowtemperature spray pyrolysis. An aqueous solution of copper dichloride CuCl2•2H2O and iron trichloride FeCl3•6H2O was sprayed onto the InSe substrate heated to 623 K. As a result, p-type CuFeO2 films with a thickness of ~ 0.3 m and a band gap of 2.6 eV were obtained. Contacts were formed using silver-based conductive paste. The I-V characteristics were studied at temperatures from 295 to 336 K. It was shown that the temperature dependence of the height of the potential barrier is linear. Based on the analysis of the temperature dependences of forward and reverse I-V characteristics, the dynamics of change of energy parameters was established and the role of energy states at the boundary of the heterojunction in the formation of the contact potential difference was clarified. The approximation of I-V characteristics was carried out within the framework of the model, which takes into account the influence of series and shunt resistances. The values of the diode coefficient, series and shunt resistances of the heterojunction were found. The mechanisms of formation of direct and reverse currents through the CuFeO2/n-InSe energy barrier were determined. The spectral dependence of the quantum efficiency of heterojunctions in the range of photon energies from 1.2 to 3.2 eV was studied. The effect of light absorption in heterostructure materials on its general photosensitivity was analyzed. The obtained results confirmed the promise of CuFeO2/n-InSe heterojunctions for photoelectronics.

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Photosensitive n-Zn0.5Cd0.5O/p-InSe Heterostructures Prepared by Magnetron Sputtering

Cited by 2 publications

References 10 publications

Photoelectric Properties of the Mn2O3/n-InSe Heterojunction

Photoelectric Properties of the Mn2O3/n-InSe Heterojunction

Photosensitive CuFeO2/n-InSe Heterojunctions

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