Photoelectric properties of vertical ionotronic nanostructures based on layered semiconductor InSe and ionic salt RbNO3 are investigated. It is shown that the nanostructures consisting of 2D InSe layers, ultrathin layers of In2O3 oxide, and ionic salt ring‐shaped nanostructures, which are located in the (0001) planes of InSe crystal and periodically along its crystallographic C axis, have a high photosensitivity.
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