Photoelectric Properties of the Mn2O3/n-InSe Heterojunction

Tkachuk, I. G.; Orletskii, I. G.; Ivanov, V. I.; Kovalyuk, Z. D.; Zaslonkin, A. V.; Netyaga, V. V.

doi:10.21272/jnep.15(2).02022

Cited by 2 publications

(3 citation statements)

References 14 publications

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“…In turn, an equally important role in the creation of a high-quality heterojunction is played by the thin film of the frontal layer, which must form a defect-free interface when in contact with the substrate. It is the optimal choice of chemical components and the film sputtering technique that allow creating heterostructures with the necessary electrical and photovoltaic parameters [7,8]. In this work, the choice was made on Fe2O3 films.…”

Section: Introductionmentioning

confidence: 99%

Fe2O3/p-InSe Heterostructures Produced by Spray Pyrolysis Method

Orletskii,

Tkachuk,

Kovalyuk

et al. 2024

J. Nano- Electron. Phys.

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The method of producing Fe2O3 films on p-InSe substrates by spray-pyrolysis method at 703 K for the formation and investigation of n-Fe2O3/p-InSe anisotype heterojunctions was studied. The advantage of this method is simplicity and cheapness. It does not require complex technological equipment or ultraclean environments. The electrical and photoelectric parameters of the heterojunctions were investigated. The effect of temperature is studied, and the regularity of the change in the energy barrier of the heterojunction with increasing temperature is given. Based on the analysis of the I-V characteristics, the nature of the currents flowing in the heterojunction was established. To explain the obtained experimental results, an energy diagram of the heterojunction is constructed, which is based on the known numerical values of the energy parameters of the materials from which the heterostructure is made. The experimental data and the proposed energy diagram agree well with each other. The spectral quantum photosensitivity of the heterojunction was measured and analyzed. It was established that n-Fe2O3/p-InSe heterojunctions are photosensitive in the energy range of 1.2÷2.8 eV.

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Section: Introductionmentioning

confidence: 99%

Fe2O3/p-InSe Heterostructures Produced by Spray Pyrolysis Method

Orletskii,

Tkachuk,

Kovalyuk

et al. 2024

J. Nano- Electron. Phys.

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“…The production of InSe substrates for the creation of heterojunctions is carried out by peeling off the material from the ingot and eliminates the operations of mechanical and chemical treatment of the surface of the plates in order to clean them. Indium selenide is used to create diodes and photosensitive structures based on the Schottky barrier and heterojunctions [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

“…Taking into account the successful application of the method for creating heterojunctions based on indium selenide and heterostructures using manganese oxide [4,10,16], the purpose of the study was to manufacture and study the photovoltaic properties of n-Mn2O3/ p-InSe heterojunctions. We have already produced photosensitive heterojunctions based on the contact of Mn2O3 with n-InSe, which show good rectifying properties [4]. Therefore, the idea of using p-InSe is quite obvious.…”

Section: Introductionmentioning

confidence: 99%

Electrical Properties and Photosensitivity of n-Mn2O3/p-InSe Heterojunctions Produced by the Spray Pyrolysis Method

Orletskii,

Tkachuk,

Ivanov

et al. 2023

J. Nano- Electron. Phys.

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The conditions of application of thin semiconductor Mn2O3 films on p-InSe crystalline layered semiconductor substrates at a temperature of 623 K by the spray-pyrolysis method to create anisotypic heterojunctions n-Mn2O3/p-InSe were investigated. InSe is a promising material for photoelectronics. The use of the Mn2O3 film, which is transparent in the region of maximum photosensitivity of InSe, makes it possible to effectively exploit the optical properties of InSe in the fabrication of various semiconductor devices. The advantage of using layered semiconductors in the production of heterojunctions is that high-quality interfaces are obtained even with a significant discrepancy in the parameters of the crystal lattices of the starting materials. This significantly expands the choice of heterojunction materials. Electrical and photoelectric parameters of n-Mn2O3/p-InSe heterojunctions were measured and theoretical models describing them were proposed. The graphical dependencies of I-V characteristics, series resistance, height of the potential barrier and photosensitivity are constructed. It was established that these heterojunctions are photosensitive and have rectifying properties. Using the energy parameters of the starting materials, an energy diagram of the heterojunction was constructed, which allows for the analysis of physical processes in the obtained heterojunctions. Based on the temperature dependence of both direct and reverse I-V characteristics, the dynamics of changes in the energy parameters of the heterojunction with temperature, as well as the mechanisms of current flow through the heterojunction, are established. The spectral photosensitivity of the heterojunction was analyzed.

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Photoelectric Properties of the Mn2O3/n-InSe Heterojunction

Cited by 2 publications

References 14 publications

Fe2O3/p-InSe Heterostructures Produced by Spray Pyrolysis Method

Fe2O3/p-InSe Heterostructures Produced by Spray Pyrolysis Method

Electrical Properties and Photosensitivity of n-Mn2O3/p-InSe Heterojunctions Produced by the Spray Pyrolysis Method

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