Extraction of Schottky diode parameters from forward current-voltage characteristics

Cheung, S. K.; Cheung, N.W.

doi:10.1063/1.97359

Cited by 2,420 publications

(1,235 citation statements)

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“…Interfacial dipole formation of the LSMO/RRP3HT interface is also confirmed by recent magnetotransport experiment [123] and by fitting the transport data with Cheung and Cheung model [124]. This interfacial dipole modifies the barrier height for the injection of spin-polarized carriers from LSMO to the OS layer.…”

Section: Lsmo -Os Interfacessupporting

confidence: 53%

Pulsed laser deposition of La_1−xSr_xMnO₃: thin-film properties and spintronic applications

Majumdar

Dijken

2013

J. Phys. D: Appl. Phys.

108

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Materials engineering at the nanoscale by precise control of growth parameters can lead to many unusual and fascinating physical properties. The development of pulsed laser deposition (PLD) 25 years ago has enabled atomistic control of thin films and interfaces and as such it has contributed significantly to advances in fundamental material science. One application area is the research field of spintronics, which requires optimized nanomaterials for the generation and transport of spin-polarized carriers. The mixed valence manganite La 1-x Sr x MnO 3 (LSMO) is an interesting material for spintronics due to its intrinsic magnetoresistance properties, electric-field tunable metal-insulator transitions, and half-metallic band structure. Studies on LSMO thin-film growth by PLD show that the deposition temperature, oxygen pressure, laser fluence, strain due to substrate-film lattice mismatch, and post-deposition annealing greatly influence the magnetic and electrical transport properties of LSMO. For spintronic structures, robust ferromagnetic exchange interactions and metallic conductivity are desirable properties. In this article, we review the physics of LSMO thin films and the important role that PLD played to advance the field of LSMObased spintronics. Some specific application areas including magnetic tunnel junctions (MTJs), multiferroic tunnel junctions (MFTJs), and organic spintronic devices are highlighted, and the advantages, drawbacks, and opportunities of PLD-grown LSMO for next-generation spintronic devices are discussed. IntroductionThe technology of spintronics uses the charge and spin of electrons to store information or to carry Pulsed laser deposition (PLD) [7] is a versatile thin-film deposition technique that can be used for nanoscale engineering of complex materials and interfaces. In correlated electron systems like LSMO, strong lattice-charge-spin coupling offers extensive control of magnetic and electronic transport properties by growth optimization and external actuation [8]. Besides intrinsic material parameters, spintronic elements often rely on band-structure effects at the interfaces between magnetic and non-magnetic thin films. Since the interface of LSMO is sensitive to bonding with other materials, charge transport due to polar discontinuities, and electric-field effects, it allows for the engineering of improved material responses and new functionalities. In this article, we review the use of PLD-grown LSMO films in spintronics. After an introduction to LSMO and a discussion on the control of LSMO properties using PLD, examples of LSMO

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Section: Lsmo -Os Interfacessupporting

confidence: 53%

Pulsed laser deposition of La_1−xSr_xMnO₃: thin-film properties and spintronic applications

Majumdar

Dijken

2013

J. Phys. D: Appl. Phys.

108

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“…[13] Figure 1b shows two modified Cheung's plots for the forward-bias region (1.35-3 V) using the experimental J-V characteristics (Figure 1a …”

Section: Current-voltage (I-v) Analysismentioning

confidence: 99%

“…[13][14][15] We then compare the ideality factors with those obtained from the impedance spectra. [16,17] We designed an equivalent circuit model for analysis of impedance spectra accounting for Undoubtedly graphene-silicon (GS) heterostructure devices will play significant roles as future rectifiers, potential barrier modulators, photodetectors, photovoltaic devices, biochemical sensors, and so on.…”

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confidence: 99%

Origin of Voltage‐Dependent High Ideality Factors in Graphene–Silicon Diodes

Park

Choi

2017

Adv Elect Materials

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devices, the hurdle should be overcome by identifying the origin. However, the origin of the wide-range ideality factor was not yet been fully elucidated.The ideality factor is a measure of how efficiently an applied bias is delivered to the junction of the device. The ideality factor of GS devices can be influenced by both voltage-independent serial resistance and voltage-dependent attributes such as interface state and quantum capacitance. Thus, one can expect that the ideality factor changes with applied bias voltage.First of all, when a bias voltage is applied to a GS junction, the Fermi level of 2D graphene changes significantly in contrast to typical metal-oxide-semiconductor (MOS) devices due to the far less density of states of graphene compared to that of 3D metal. As a result, the effective Schottky barrier height and the resistance of graphene change with bias voltage. This directly influences the GS device performance and the ideality factor.Second, a peculiar issue related to the GS devices is the un avoidable wet graphene transfer process on a cleaned silicon wafer. During this process, oxidation of silicon occurs naturally. As a result, the GS devices inevitably have a native interfacial oxide layer between graphene and silicon although it may be very thin. This interfacial oxide layer directly influences the performance of GS devices. Although the layer can act as a tunneling barrier, which may enhance the effective potential barrier height, this effect has often been ignored because the layer is thin enough to assume that the transport property is largely governed by the semiconductor rather than limited by the tunneling.Third, the truncated silicon surface has high density of surface states. The surface states can exist as interface states of GS devices. The interface states can be equilibrated with silicon itself or with the graphene and this depends on the thickness of the interfacial oxide layer. Due to the very thin native oxide layer, one can expect that the silicon interface state can be mostly equilibrated with graphene rather than silicon itself. But this has not been confirmed yet.In this study, first we extract the voltage-dependent ideality factors of graphene-silicon Schottky diodes from their I-V characteristics based on Schottky emission theory. [13][14][15] We then compare the ideality factors with those obtained from the impedance spectra. [16,17] We designed an equivalent circuit model for analysis of impedance spectra accounting for Undoubtedly graphene-silicon (GS) heterostructure devices will play significant roles as future rectifiers, potential barrier modulators, photodetectors, photovoltaic devices, biochemical sensors, and so on. However, typical GS devices suffer from unusually wide-range voltage-dependent high ideality factors (η = 1.1-33.5). To overcome this hurdle, the origin of this wide-range voltage-dependent ideality factor should first be identified but this has not yet been fully studied. This study focuses on identifying the origin using impedance spectroscop...

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“…As applied bias voltage higher than 1.0 V (region III), the strong injection of space charge limited current (SCLC), with its slope nearly 2.5, was observed. The value of Rs was calculated from the forward bias I-V data using the Cheung's method [4]. Rs value can be obtained from the following equation: Experimental dV/d(lnI)-I at room temperature is presented in Figure 4.…”

Section: Resultsmentioning

confidence: 99%

Temperature-dependent electrical transport characteristics of p-SnS/n-WO₃:Sb heterojunction diode

Gaewdang

Wongcharoen

2018

IOP Conf. Ser.: Mater. Sci. Eng.

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Properties of SnS thin films grown by physical vapour deposition M Ganchev, P Vitanov, M SendovaVassileva et al. Abstract. The p-SnS/n-WO3:Sb heterojunction diode was successfully obtained by thermal evaporating SnS thin films on WO3 doped with 2.0 mol% Sb2O3 of 1 mm thick ceramic pellet substrate. The electrical properties of p-SnS/n-WO3:Sb heterojunction were investigated by forward current-voltage-temperature (I-V-T) characteristics in the temperature range of 20-300 K. It was found that at low forward bias voltage (<0.25V), the conduction mechanism of the diode exhibits Ohmic conduction. At intermediate voltage (0.25

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Extraction of Schottky diode parameters from forward current-voltage characteristics

Cited by 2,420 publications

References 2 publications

Pulsed laser deposition of La_1−xSr_xMnO₃: thin-film properties and spintronic applications

Pulsed laser deposition of La_1−xSr_xMnO₃: thin-film properties and spintronic applications

Origin of Voltage‐Dependent High Ideality Factors in Graphene–Silicon Diodes

Temperature-dependent electrical transport characteristics of p-SnS/n-WO₃:Sb heterojunction diode

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Extraction of Schottky diode parameters from forward current-voltage characteristics

Cited by 2,420 publications

References 2 publications

Pulsed laser deposition of La1−xSrxMnO3: thin-film properties and spintronic applications

Pulsed laser deposition of La1−xSrxMnO3: thin-film properties and spintronic applications

Origin of Voltage‐Dependent High Ideality Factors in Graphene–Silicon Diodes

Temperature-dependent electrical transport characteristics of p-SnS/n-WO3:Sb heterojunction diode

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Pulsed laser deposition of La_1−xSr_xMnO₃: thin-film properties and spintronic applications

Pulsed laser deposition of La_1−xSr_xMnO₃: thin-film properties and spintronic applications

Temperature-dependent electrical transport characteristics of p-SnS/n-WO₃:Sb heterojunction diode