The ZnSe/Si heterojunction is of specific interest since this structure provides effective solar cell and enables the integration of wide bandgap device in silicon circuits. It is known that the quality of the diode and the current transport mechanisms across the heterojunction may be greatly influenced by the quality of the interface and depends on the crystallinity of the film layer. In this work, n-ZnSe/p-Si (100) heterojunction was fabricated by thermal evaporating ZnSe thin films on p-Si (100) substrates. The current-voltage characteristics of n-ZnSe/p-Si (100) heterojunction were investigated in temperature range 20-300 K. Some important parameters such as barrier height, ideality factor and series resistance values evaluated by using thermionic emission (TE) theory and Cheung’s method at room temperature are n = 2.910,φB0= 0.832 eV and 8.59103Ω, respectively. The temperature dependence of the saturation current and ideality factor are well described by tunneling enhanced recombination at junction interface with activation energy and characteristic energy values about 1.293 eV and E00= 95 meV, respectively. The carrier concentration of ZnSe thin films about 3.16×1013cm-3was deduced from the C-V measurements at room temperature. Admittance spectroscopy was employed for analysis of the defect energy levels situated in depletion region. The results showed that there was a single trap level whose position in the band gap was close to 0.04 eV above valence band. The results of this work may be useful for application such as heterojunction solar cells.
Properties of SnS thin films grown by physical vapour deposition M Ganchev, P Vitanov, M SendovaVassileva et al. Abstract. The p-SnS/n-WO3:Sb heterojunction diode was successfully obtained by thermal evaporating SnS thin films on WO3 doped with 2.0 mol% Sb2O3 of 1 mm thick ceramic pellet substrate. The electrical properties of p-SnS/n-WO3:Sb heterojunction were investigated by forward current-voltage-temperature (I-V-T) characteristics in the temperature range of 20-300 K. It was found that at low forward bias voltage (<0.25V), the conduction mechanism of the diode exhibits Ohmic conduction. At intermediate voltage (0.25
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.