Thermoelectric properties of Ni-doped CuAlO2

Polycrystalline bulk copper aluminate Cu1-x-yAgxByAlO2 with B = Ni or Zn were prepared by spark plasma sintering and subsequent thermal treatment. The influence of partial substitution of Ag, Ni and Zn for Cu-sites in CuAlO2 on the high temperature thermoelectric properties has been studied. The addition of Ag and Zn was found to enhance the formation of CuAlO2 phase and to increase the electrical conductivity. The addition of Ag or Ag and Ni on the other hand decreases the electrical conductivity. The highest power factor of 1.26 × 10-4 W/mK2 was obtained for the addition of Ag and Zn at 1,060 K, indicating a significant improvement compared with the non-doped CuAlO2 sample.

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“…These results are consistent with the report in Ref. [ 32 ] for the CuAl 1-x Ni x O 2 (x = 0.05, 0.10) samples.…”

Section: Resultssupporting

confidence: 93%

“…A similar effect of Ni substitution on the electrical conductivity was reported by Wongcharoen et al . for the Ni-doped CuAlO 2 polycrystalline bulk samples [ 32 ]. It is interesting to see from Figure 3 that the addition of Ag and Zn resulted in an increase in the electrical conductivity.…”

Section: Resultsmentioning

confidence: 99%

The Effect of (Ag, Ni, Zn)-Addition on the Thermoelectric Properties of Copper Aluminate

Yanagiya

Nong

et al. 2010

Materials

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“…44 Similarly, Ni and Sb doping in Al site is also attempted, but showed a decreased conductivity with increased Ni/Sb concentration. [198][199] Instead of a trivalent cation, doping of divalent cation in the M III sites is found to be more preferable for enhanced hole conductivity according to the following Eq. [5]:…”

Section: Delafossite P-tcomentioning

confidence: 99%

A Review on Cu2O and CuI-Based p-Type Semiconducting Transparent Oxide Materials: Promising Candidates for New Generation Oxide Based Electronics

Nandy¹,

Banerjee

Fortunato³

et al. 2013

Rev Adv Sci Engng

114

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Cu I -based p-type semiconducting and transparent oxide materials have recently gained renewed interest for potential applications in energy-related devices. As a counter-part of n-type transparent oxides like ZnO, SnO 2 , Indium tin oxide etc., development of p-type transparent conducting oxides has provided a new dimension to the field of 'Transparent Electronics' for new-generation energy-efficient optoelectronic devices. An all-transparent p-n junction device can lead to the formation of a 'functional window' that would transmit the visible light yet generates electricity by the absorption of ultra-violet part. In this article, a comprehensive review on the recent developments and trends on Cu I -based p-type oxide material is presented. The origin of visible transparency and p-type conductivity within these types of oxides are discussed. The properties, defect mechanisms and syntheses of various Cu I -based p-type oxides, including the parent compound, Cu 2 O are discussed in details. Also, the applications of various Cu I -based p-type oxides in energy-related fields and optoelectronic devices are discussed comprehensively. Finally, the future trend of the Cu I -based p-type transparent conducting oxides in terms of syntheses and applications are proposed for potential usage in diverse fields and novel devices.

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“…For all these reasons, finding an intrinsic p-type material has been an urgent issue. The calculation indicate that the AMO 2 type delafossite may be the potential choice, particularly CuAlO 2 , with the p-type conductivity, chemical stability and ruggedness, has attracted much attention since the CuAlO 2 films being first reported in 1997 [9][10][11][12] 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 3 it is a pity that there is still a serious problem-the efficiency for solar energy utilization. As known, most of the earth's surface sunlight is visible light, but in order to keep the excellent transmittance, most of the p-n type devices are composed of wide band gap TCOs, which can't economize the solar energy.…”

mentioning

confidence: 99%

Photovoltaic Conversion Enhancement of a Carbon Quantum Dots/p-Type CuAlO₂/n-Type ZnO Photoelectric Device

Pan¹,

Sheng²,

Zhang³

et al. 2015

ACS Appl. Mater. Interfaces

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Carbon quantum dots (C QDs)/p-type CuAlO2/n-type ZnO photoelectric bilayer film composites were prepared by a simple route, through which ZnO films were sputtered on crystal quartz substrates and CuAlO2 films were prepared by sol-gel on ZnO films and then these bilayer films were composited with C QDs on their surface. The characterization results indicated that C QDs were well combined with the surface of the CuAlO2 films. The photovoltage and photocurrent of these bilayer film composites were investigated under illumination and darkness switching, which demonstrated to be significantly enhanced compared with those of the CuAlO2/ZnO bilayer films. Through analysis, this enhancement of the photoconductivity was mainly attributed to C QDs with unique up-converted photoluminescence behavior.

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Thermoelectric properties of Ni-doped CuAlO2

Cited by 17 publications

References 10 publications

The Effect of (Ag, Ni, Zn)-Addition on the Thermoelectric Properties of Copper Aluminate

The Effect of (Ag, Ni, Zn)-Addition on the Thermoelectric Properties of Copper Aluminate

A Review on Cu<SUB>2</SUB>O and Cu<SUP>I</SUP>-Based <I>p</I>-Type Semiconducting Transparent Oxide Materials: Promising Candidates for New Generation Oxide Based Electronics

Photovoltaic Conversion Enhancement of a Carbon Quantum Dots/p-Type CuAlO₂/n-Type ZnO Photoelectric Device

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Thermoelectric properties of Ni-doped CuAlO2

Cited by 17 publications

References 10 publications

The Effect of (Ag, Ni, Zn)-Addition on the Thermoelectric Properties of Copper Aluminate

The Effect of (Ag, Ni, Zn)-Addition on the Thermoelectric Properties of Copper Aluminate

A Review on Cu<SUB>2</SUB>O and Cu<SUP>I</SUP>-Based <I>p</I>-Type Semiconducting Transparent Oxide Materials: Promising Candidates for New Generation Oxide Based Electronics

Photovoltaic Conversion Enhancement of a Carbon Quantum Dots/p-Type CuAlO2/n-Type ZnO Photoelectric Device

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Photovoltaic Conversion Enhancement of a Carbon Quantum Dots/p-Type CuAlO₂/n-Type ZnO Photoelectric Device