With 6.93M confirmed cases of COVID-19 worldwide, making individuals aware of their sanitary health and ongoing pandemic remains the only way to prevent the spread of this virus. Wearing masks is an important step in this prevention. Hence, there is a need for monitoring if people are wearing masks or not. Closed circuit television (CCTV) cameras endowed with computer vision function by embedded systems, have become popular in a wide range of applications, and can be used in this case for real time monitoring of people wearing masks or not. In this paper, we propose to model this task of monitoring as a special case of object detection. However, real-time scene parsing through object detection running on edge devices is very challenging, due to limited memory and computing power of embedded devices. To deal with these challenges, we used a few popular object detection algorithms such as YOLOv3, YOLOv3Tiny, SSD and Faster R-CNN and evaluated them on Moxa3K benchmark dataset. The results obtained from these evaluations help us to determine methods that are more efficient, faster, and thus are more suitable for real-time object detection specialized for this task.
Cu I -based p-type semiconducting and transparent oxide materials have recently gained renewed interest for potential applications in energy-related devices. As a counter-part of n-type transparent oxides like ZnO, SnO 2 , Indium tin oxide etc., development of p-type transparent conducting oxides has provided a new dimension to the field of 'Transparent Electronics' for new-generation energy-efficient optoelectronic devices. An all-transparent p-n junction device can lead to the formation of a 'functional window' that would transmit the visible light yet generates electricity by the absorption of ultra-violet part. In this article, a comprehensive review on the recent developments and trends on Cu I -based p-type oxide material is presented. The origin of visible transparency and p-type conductivity within these types of oxides are discussed. The properties, defect mechanisms and syntheses of various Cu I -based p-type oxides, including the parent compound, Cu 2 O are discussed in details. Also, the applications of various Cu I -based p-type oxides in energy-related fields and optoelectronic devices are discussed comprehensively. Finally, the future trend of the Cu I -based p-type transparent conducting oxides in terms of syntheses and applications are proposed for potential usage in diverse fields and novel devices.
Stoichiometric NiO, a Mott-Hubbard insulator at room temperature, shows p-type electrical conduction due to the introduction of Ni(2+) vacancies (V(Ni)('')) and self-doping of Ni(3+) ions in the presence of excess oxygen. The electrical conductivity of this important material is low and not sufficient for active device fabrication. Al doped NiO thin films were synthesized by radio frequency (RF) magnetron sputtering on glass substrates at a substrate temperature of 250 °C in an oxygen + argon atmosphere in order to enhance the p-type electrical conductivity. X-ray diffraction studies confirmed the correct phase formation and also oriented growth of NiO thin films. Al doping was confirmed by x-ray photoelectron spectroscopic studies. The structural, electrical and optical properties of the films were investigated as a function of Al doping (0-4 wt%) in the target. The room temperature electrical conductivity increased from 0.01-0.32 S cm (-1) for 0-4% Al doping. With increasing Al doping, above the Mott critical carrier density, energy band gap shrinkage was observed. This was explained by the shift of the band edges due to the existence of exchange and correlation energies amongst the electron-electron and hole-hole systems and also by the interaction between the impurity quasi-particle system.
The world in the 21st century is confronted with multifaceted challenges against rapid climate change and continuous ecological disturbances caused by revolutionary socio‐economic developments, accelerated expansion of disposable electronic gadgets, and growing dependence on unrecyclable raw materials, among others. The ever‐increasing consumer demand for electronic devices is significantly contributing to the world's fastest‐growing waste stream, known as electronic waste (e‐waste), which is becoming an environmental threat at an alarming rate due to its toxic legacy. The ever‐shortening lifespan of smart technologies has created a “tsunami of e‐waste,” as the United Nations has characterized it, with 50 million tons accumulated each year, of which only 20% undergo formal e‐recycling. Therefore, the challenge of optimizing the current resources management models with an aim of improving the manufacturing processes and lifecycles of electronic devices, as well as building a circular economy, has become significantly prominent. Paper/cellulose, which covers a wide range of essential needs in everyday scenarios (from packaging to writing utilities), constitutes promising candidates for the effective achievement of a circular economy. Particularly, cellulose is revealed as an advantageous material for electronic applications because of its abundant availability, which contributes to its cost‐effectiveness, straightforward fabrication process, and high recyclability and reproducibility.
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