Electrical Properties of Al-Doped CdO Thin Films Prepared by Thermal Evaporation in Vacuum

Wongcharoen, Ngamnit; Gaewdang, Thitinai; Wongcharoen, T.

doi:10.1016/j.egypro.2012.02.044

Cited by 39 publications

(12 citation statements)

References 9 publications

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“…Opposite trend is observed in the values of carrier concentration and mobility of samples. The electrical parameters presented in this work are in well agreement with literature results [23].…”

Section: Optical Propertiessupporting

confidence: 89%

Influence of growth temperature on the physico-chemical properties of sprayed cadmium oxide thin films

Desai

Suryawanshi

Bhosale

et al. 2015

Ceramics International

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Section: Optical Propertiessupporting

confidence: 89%

Influence of growth temperature on the physico-chemical properties of sprayed cadmium oxide thin films

Desai

Suryawanshi

Bhosale

et al. 2015

Ceramics International

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“…Similar explanation was also adopted and examined by X-ray photoelectron spectroscopy with Cr-doped ZnO [19]. It is interesting to mention that the obtained dependences shown in Figure 4 are similar in forms to those obtained in [20] for doping of CdO with Al, of 6-CN ionic radius 2.32 × 10 −2 nm, which may support the vision given in the introduction. The enhancement followed by reduction of conductivity and mobility of carriers in CdO : Ge (Figure 4) could be explained in conjunction with the structural variations due to Ge incorporation by the following model.…”

Section: Electrical Propertiessupporting

confidence: 73%

Germanium Doping to Improve Carrier Mobility in CdO Films

Dakhel

2013

Advances in OptoElectronics

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This investigation addresses the structural, optical, and electrical properties of germanium incorporated cadmium oxide (CdO : Ge) thin films. The focus was on the improvement in carrier mobility to achieve high transparency for near-infrared light and low resistivity at the same time. The properties were studied using X-ray diffraction, SEM, spectral photometry, and Hall measurements. All CdO : Ge films were polycrystalline with high texture orientation along [111] direction. It was observed that it is possible to control the carrier concentration ( el ) and mobility ( ) with Ge-incorporation level. The mobility could be improved to a highest value of ∼91 cm 2 /V⋅s with Ge doping of 0.25 wt% while maintaining the electrical resistivity as low as 2.76 × 10 −4 Ω⋅cm and good transparency ∼80% in the NIR spectral region. The results of the present work proved to select Ge as dopant to achieve high carrier mobility with low resistivity for application in transparent conducting oxide (TCO) field. Generally, the properties found make CdO : Ge films particularly interesting for the application in optoelectronic devices like thin-film solar cells.

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“…Metal doped and pure semiconductor cadmium oxide that used in a varied range of optoelectronic application like solar cell, optical communication and smart window [1]. Cadmium oxide is a pretty toxic by inhalation, oral, and dermal materials but we use it giving to its various applications and different features.…”

Section: Introductionmentioning

confidence: 99%

Effect of copper on physical properties of CdO thin films and n-CdO: Cu / p-Si heterojunction

Hussein¹,

Hassun²,

Maiyaly³

et al. 2022

JOR

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Transition metal Copper doped Cadmium oxide and (Cu: CdO and n-CdO: Cu / p-Si) thin films were prepared onto glass and p-type single crystal (111) Si substrates at temperature 300 K by thermal evaporation technique with thickness (400±30) nm. The effects of different Cu ratios on the CdO thin films and heterojunction of n-CdO / p-Si.. The X-ray diffraction analysis approves the CdO films are polycrystalline and cubic structure with lattice parameter of 0.4689 nm. The optical transmittance exhibits excellent optical absorption for 6% Cu doping. Decreased of optical band gap from 2.1 to 1.8 eV. Hall measurement approves that CdO material n type with a maximum carrier mobility of 144.6 (cm2 /Vs) with resistivity of 0.107991 (Ω.cm) were achieved for 6% Copper (Cu) doping. The I-V characteristics of heterojunction prepared under illumination was carried out by(100 mW/cm2) incident power density at different Cu doping.

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Electrical Properties of Al-Doped CdO Thin Films Prepared by Thermal Evaporation in Vacuum

Cited by 39 publications

References 9 publications

Influence of growth temperature on the physico-chemical properties of sprayed cadmium oxide thin films

Influence of growth temperature on the physico-chemical properties of sprayed cadmium oxide thin films

Germanium Doping to Improve Carrier Mobility in CdO Films

Effect of copper on physical properties of CdO thin films and n-CdO: Cu / p-Si heterojunction

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