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AgInSe2 (AIS) thin films solar cell involving of n-type AgInSe2 and Si of p-type substrate by using thermal evaporation method. The influence of annealing of the preparation AgInSe2 were considered to find the best properties of solar device. Thin film AIS have been deposited under the vacuum of 1.5*10-6 Torr with (400) nm thickness at R.T and annealing temperatures (473,573) K. Polycrystalline tetragonal structure for AIS thin films from XRD and increasing of surface roughness from AFM, energy gap values decreasing with increasing annealing temperatures, all films were negative type, I-V characteristics show increasing of efficiency with increasing of annealing temperatures.

Transition metal Copper doped Cadmium oxide and (Cu: CdO and n-CdO: Cu / p-Si) thin films were prepared onto glass and p-type single crystal (111) Si substrates at temperature 300 K by thermal evaporation technique with thickness (400±30) nm. The effects of different Cu ratios on the CdO thin films and heterojunction of n-CdO / p-Si.. The X-ray diffraction analysis approves the CdO films are polycrystalline and cubic structure with lattice parameter of 0.4689 nm. The optical transmittance exhibits excellent optical absorption for 6% Cu doping. Decreased of optical band gap from 2.1 to 1.8 eV. Hall measurement approves that CdO material n type with a maximum carrier mobility of 144.6 (cm2 /Vs) with resistivity of 0.107991 (Ω.cm) were achieved for 6% Copper (Cu) doping. The I-V characteristics of heterojunction prepared under illumination was carried out by(100 mW/cm2) incident power density at different Cu doping.

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Thin films Tin sulfide SnS pure and doped with different ratios of Cu (X=0, 0.01, 0.03 and 0.05) were prepared using thermal evaporation with a vacuum of 4*10-6 mbar on two types of substrates n-type Si and glass with (500) nm thickness for solar cell application. X-ray diffraction and AFM analysis were carried out to explain the influence of Cu ratio dopant on structural and morphological properties respectively. SnS phase appeared forming orthorhombic structure with preferred orientation (111), increase the crystallinity degree and surface roughness with increase Cu ratio. UV/Visible measurement revealed the decrease in energy gap from 1.9eV for pure SnS to 1.5 for SnS: Cu (0.05) making these samples suitable for photovoltaic application. On the other hand, Hall Effect indicated the high percentage of Cu increased carrier concentration and mobility. Current-voltage characteristics of p-SnS: Cu / n-Si demonstrate good photovoltaic effect as ratios of Cu increased and the contact parameters which obtained from these measurement show good dependence on doping concentration. In addition, 0.05 of Cu doping was an optimum level of concentration doping increase the efficiency of SnS: Cu /Si solar cell to 3.5%.