In metal/oxide heterostructures, rich chemical, electronic, magnetic and mechanical properties can emerge from interfacial chemistry and structure. The possibility to dynamically control interface characteristics with an electric field paves the way towards voltage control of these properties in solid-state devices. Here, we show that electrical switching of the interfacial oxidation state allows for voltage control of magnetic properties to an extent never before achieved through conventional magneto-electric coupling mechanisms. We directly observe in situ voltage-driven O(2-) migration in a Co/metal-oxide bilayer, which we use to toggle the interfacial magnetic anisotropy energy by >0.75 erg cm(-2) at just 2 V. We exploit the thermally activated nature of ion migration to markedly increase the switching efficiency and to demonstrate reversible patterning of magnetic properties through local activation of ionic migration. These results suggest a path towards voltage-programmable materials based on solid-state switching of interface oxygen chemistry.

Spintronic devices currently rely on magnetic switching or controlled motion of domain walls by an external magnetic field or spin-polarized current. Achieving the same degree of magnetic controllability using an electric field has potential advantages including enhanced functionality and low power consumption. Here we report on an approach to electrically control local magnetic properties, including the writing and erasure of regular ferromagnetic domain patterns and the motion of magnetic domain walls, in CoFe-BaTiO3 heterostructures. Our method is based on recurrent strain transfer from ferroelastic domains in ferroelectric media to continuous magnetostrictive films with negligible magnetocrystalline anisotropy. Optical polarization microscopy of both ferromagnetic and ferroelectric domain structures reveals that domain correlations and strong inter-ferroic domain wall pinning persist in an applied electric field. This leads to an unprecedented electric controllability over the ferromagnetic microstructure, an accomplishment that produces giant magnetoelectric coupling effects and opens the way to electric-field driven spintronics.

Systems allowing label-free molecular detection are expected to have enormous impact on biochemical sciences. Research focuses on materials and technologies based on exploiting localized surface plasmon resonances in metallic nanostructures. The reason for this focused attention is their suitability for single molecule sensing, arising from intrinsically nanoscopic sensing volume, and the high sensitivity to the local environment. Here we propose an alternative route, which enables radically improved sensitivity compared torecently reported plasmon-based sensors. Such high sensitivity is achieved by exploiting the control of the phase of light in magnetoplasmonic nanoantennas. We demonstrate a manifold improvement of refractometric sensing figure-of-merit. Most remarkably, we show a raw surface sensitivity (i.e., without applying fitting procedures) of two orders of magnitude higher than the current values reported for nanoplasmonic sensors. Such sensitivity corresponds to a mass of ~0.8 ag per nanoantenna of polyamide-6.6 (n=1.51), which is representative for a large variety of polymers, peptides and proteins.

Resistive switching in transition metal oxides involves intricate physical and chemical behaviours with potential for non-volatile memory and memristive devices. Although oxygen vacancy migration is known to play a crucial role in resistive switching of oxides, an in-depth understanding of oxygen vacancy-driven effects requires direct imaging of atomic-scale dynamic processes and their real-time impact on resistance changes. Here we use in situ transmission electron microscopy to demonstrate reversible switching between three resistance states in epitaxial La2/3Sr1/3MnO3 films. Simultaneous high-resolution imaging and resistance probing indicate that the switching events are caused by the formation of uniform structural phases. Reversible horizontal migration of oxygen vacancies within the manganite film, driven by combined effects of Joule heating and bias voltage, predominantly triggers the structural and resistive transitions. Our findings open prospects for ionotronic devices based on dynamic control of physical properties in complex oxide nanostructures.

Energy efficiency, parallel information processing, and unsupervised learning make the human brain a model computing system for unstructured data handling. Different types of oxide memristors can emulate synaptic functions in artificial neuromorphic circuits. However, their cycle‐to‐cycle variability or strict epitaxy requirements remain a challenge for applications in large‐scale neural networks. Here, solution‐processable ferroelectric tunnel junctions (FTJs) with P(VDF‐TrFE) copolymer barriers are reported showing analog memristive behavior with a broad range of accessible conductance states and low energy dissipation of 100 fJ for the onset of depression and 1 pJ for the onset of potentiation by resetting small tunneling currents on nanosecond timescales. Key synaptic functions like programmable synaptic weight, long‐ and short‐term potentiation and depression, paired‐pulse facilitation and depression, and Hebbian and anti‐Hebbian learning through spike shape and timing‐dependent plasticity are demonstrated. In combination with good switching endurance and reproducibility, these results offer a promising outlook on the use of organic FTJ memristors as building blocks in artificial neural networks.

The directions of the arrows in the ferroelectric domain image (FE) of Figure 2 in the above-mentioned article are incorrect and should be rotated by 90° so that they reflect the experimentally observed collinear alignment between the ferroelectric polarization of the BaTiO 3 substrate and the strain-induced uniaxial magnetic easy axes of the CoFe film. We provide the corrected Figure 2 below. The arguments and conclusions of the original article are not affected. Figure 2.Magnetic hysteresis curve and polarization microscopy images of the ferroelectric domain structure (FE) and magnetic stripe pattern during several stages of the magnetization reversal process (R1, S1, R2, S2). The figure depicts experimental data for a magnetic field angle of θ = 10°. The hysteresis curve represents an average magnetic response from many a1 and a2 domains. The arrows in the images indicate the orientation of ferroelectric polarization (FE) and film magnetization in the remnant state (R1 and R2) and during abrupt magnetic switching (S1 and S2). The imaged areas are 30 × 40 µm. CORRECTION

Magnonics is a budding research field in nanomagnetism and nanoscience that addresses the use of spin waves (magnons) to transmit, store, and process information. The rapid advancements of this field during last one decade in terms of upsurge in research papers, review articles, citations, proposals of devices as well as introduction of new sub-topics prompted us to present the first Roadmap on Magnonics. This a collection of 22 sections written by leading experts in this field who review and discuss the current status besides presenting their vision of future perspectives. Today, the principal challenges in applied magnonics are the excitation of sub-100 nm wavelength magnons, their manipulation on the nanoscale and the creation of sub-micrometre devices using low-Gilbert damping magnetic materials and its interconnections to standard electronics. To this end, magnonics offers lower energy consumption, easier integrability and compatibility with CMOS structure, reprogrammability, shorter wavelength, smaller device features, anisotropic properties, negative group velocity, non-reciprocity and efficient tunability by various external stimuli to name a few. Hence, despite being a young research field, magnonics has come a long way since its early inception. This Roadmap asserts a milestone for future emerging research directions in magnonics, and hopefully, it will inspire a series of exciting new articles on the same topic in the coming years.

The integration and cooperation of mechanoreceptors, neurons and synapses in somatosensory systems enable humans to efficiently sense and process tactile information. Inspired by biological somatosensory systems, we report an optoelectronic spiking afferent nerve with neural coding, perceptual learning and memorizing capabilities to mimic tactile sensing and processing. Our system senses pressure by MXene-based sensors, converts pressure information to light pulses by coupling light-emitting diodes to analog-to-digital circuits, then integrates light pulses using a synaptic photomemristor. With neural coding, our spiking nerve is capable of not only detecting simultaneous pressure inputs, but also recognizing Morse code, braille, and object movement. Furthermore, with dimensionality-reduced feature extraction and learning, our system can recognize and memorize handwritten alphabets and words, providing a promising approach towards e-skin, neurorobotics and human-machine interaction technologies.