Extraction of physical parameters on silicon nanocrystals devoted to non-volatile memories

Amouroux, J.; Faivre, Emilie; Boivin, P.; Müller, Christophe; Deleruyelle, Damien; Fares, L.; Maillot, Pauline; Putero, Magali; Jalaguier, E.

doi:10.1109/iscdg.2012.6360029

Cited by 2 publications

(3 citation statements)

References 10 publications

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“…The samples used in this work are silicon nanocrystal and floating gate memory cells integrated on 200mm wafers. The size and density of silicon nanocrystals were controlled in-line using an image processing technique of a critical dimension scanning electron microscopy (CDSEM) picture [10]. Two types of samples with and without SiN capping layer on Si-ncs, are compared with a floating gate cell, the samples description is reported in Table I.…”

Section: B Samples Descriptionmentioning

confidence: 99%

Dynamic behavior of silicon nanocrystal memories during the hot carrier injection

Marca

Masoero

Postel-Pellerin

et al. 2013

2013 IEEE International Conference on Solid Dielectrics (ICSD)

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In this paper we present the last improvement on programming window and consumption of silicon nanocrystal memory cell (Si-nc). Using a dynamic technique to measure the drain current during the hot carrier injection (HCI) programming operation, we explain the behavior of Flash floating gate (F.G.) and silicon nanocrystal memories. We use TCAD simulations to reproduce the charge diffusion in the nanocrystal trapping layer in order to understand the physical mechanism. Finally experimental results of electrical characterizations are shown using different bias conditions to compare the devices.

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Section: B Samples Descriptionmentioning

confidence: 99%

Dynamic behavior of silicon nanocrystal memories during the hot carrier injection

Marca

Masoero

Postel-Pellerin

et al. 2013

2013 IEEE International Conference on Solid Dielectrics (ICSD)

Self Cite

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“…Silicon nanocrystals size and density were observed with an industrial CDSEM tool which was generally used to control critical photolithography dimensions (Figure 2.a) (6). A dedicated tool developed with Image-J software is used to automatically extract the Si-nc morphological parameters: diameter (Φ) and density (7). After contrast optimization and image processing (Figure 2b-c), the mean values of Si-nc diameter and density have been obtained for two different recipes: Φ=9nm density=7.3•10 11 nc/cm² and Φ=12nm with density=6.7•10 11 nc/cm².…”

Section: Process Characterizationmentioning

confidence: 99%

“…The 5.2nm thick tunnel oxide was grown on a p-type substrate. The silicon nanocrystals average size and density were measured in-line using Critical Dimension Scanning Electron Microscopy technique (7), in this case we compare the samples with two diameters Φ=6nm and Φ=9nm. Then, to complete the stack, the ONO (Oxide-Nitride-Oxide) Inter-Poly Dielectric (IPD) layer was deposited to reach 14.5nm of Equivalent Oxide Thickness (EOT).…”

Section: Effect Of Silicon Nanocrystal Sizementioning

confidence: 99%

Improved Performance of Silicon Nanocrystal Memories for Application Working Over a Wide Range of Temperature

et al. 2013

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The microelectronic industry requires more and more low consumption and high reliability solutions. In this scenario the silicon nanocrystal memories (Si-nc) are one of the most mature technologies able to replace the Flash floating gate in NOR embedded applications. The main advantages of Si-nc memories are: the full compatibility with the CMOS process using a reduced number of masks (1) and the robustness against SILC (2). In this paper we present an experimental work on the optimized silicon nanocrystal cell industrially manufactured, where the reliability is improved (3). In particular the impact of silicon nanocrystals size and temperature on cell programming window is shown. Moreover we demonstrated for the first time at our knowledge that it is possible to achieve 1Mcycles endurance characteristic in the temperature range of [-40°C; 150°C], programming by channel hot electron (CHE) and erasing by Fowler-Nordheim (FN). Technical DetailsThe Non-Volatile Memories (NVM) integrating silicon nanocrystals are considered as an emerging solution to extend Flash memories downscaling. In this paragraph we explain the Si-nc industrial nucleation and grown fabrication process by Low Pressure Chemical Vapor Deposition (LPCVD). In a context of technological industrialization, it is of primary importance to develop in-line metrology tools dedicated to Si-nc growth process control. Hence, silicon nanocrystals were observed in top view by using an in-line Critical Dimension Scanning Electron Microscopy (CDSEM), thus their average size and density were extracted from image processing (4). Silicon nanocrystal fabrication processSilicon nanocrystals were grown on top of a thin silicon oxide (SiO 2 ) by Low Pressure Chemical Vapor Deposition two steps recipe. The active tunnel oxide surface was chemically prepared to increase the number of silanol groups which are used as nucleation sites; this cleaning step impacts the final tunnel oxide thickness (5). SiO 2 top surface presents both siloxane ( Figure 1a) and silanol (Figure 1b) units. The two steps process was used in either epitaxy tool or in industrial LPCVD furnace. The first step consists in nucleation with silane (SiH 4 ) diffusion on hydroxyl tunnel oxide surface (Figure 1c). The second step concerns a selective growth achieved by using 10.1149/05304.0129ecst ©The Electrochemical Society ECS Transactions, 53 (4) 129-139 (2013) 129 ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 138.251.14.35 Downloaded on 2015-03-17 to IP

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Extraction of physical parameters on silicon nanocrystals devoted to non-volatile memories

Cited by 2 publications

References 10 publications

Dynamic behavior of silicon nanocrystal memories during the hot carrier injection

Dynamic behavior of silicon nanocrystal memories during the hot carrier injection

Improved Performance of Silicon Nanocrystal Memories for Application Working Over a Wide Range of Temperature

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