Dynamic behavior of silicon nanocrystal memories during the hot carrier injection

Abstract

In this paper we present the last improvement on programming window and consumption of silicon nanocrystal memory cell (Si-nc). Using a dynamic technique to measure the drain current during the hot carrier injection (HCI) programming operation, we explain the behavior of Flash floating gate (F.G.) and silicon nanocrystal memories. We use TCAD simulations to reproduce the charge diffusion in the nanocrystal trapping layer in order to understand the physical mechanism. Finally experimental results of electrical characterizations are shown using different bias conditions to compare the devices.