Extraction and Analysis of the Characteristic Parameters in Back‐to‐Back Connected Asymmetric Schottky Diode

Zuo, Wangmeng; Zang, Wanyu; Shi, Yeming; Zhu, Xingyu; Rao, Gaofeng; Wang, Yan; Chu, Junwei; Gong, Cheng; Gao, Xiuying; Sun, Hui; Huanglong, Sibo; Yang, Dingyu; Wangyang, Peihua

doi:10.1002/pssa.201901018

Cited by 12 publications

(9 citation statements)

References 43 publications

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“…In any case, the probable presence of asymmetric Schottky contacts at the electrode interfaces does not impact the procedures used to extract the relevant parameters of the interfaces, such as the height of the potential barriers or the effective density of free carriers. Similar procedures were used for semiconductor structures with asymmetric Schottky diodes or with strained metal–semiconductor interface 49 – 51 .…”

Section: Discussionmentioning

confidence: 99%

Controlling polarization direction in epitaxial Pb(Zr0.2Ti0.8)O3 films through Nb (n-type) and Fe (p-type) doping

Chirilă

Stancu

Boni

et al. 2022

Sci Rep

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Fe (acceptor) and Nb (donor) doped epitaxial Pb(Zr0.2Ti0.8)O3 (PZT) films were grown on single crystal SrTiO3 substrates and their electric properties were compared to those of un-doped PZT layers deposited in similar conditions. All the films were grown from targets produced from high purity precursor oxides and the doping was in the limit of 1% atomic in both cases. The remnant polarization, the coercive field and the potential barriers at electrode interfaces are different, with lowest values for Fe doping and highest values for Nb doping, with un-doped PZT in between. The dielectric constant is larger in the doped films, while the effective density of charge carriers is of the same order of magnitude. An interesting result was obtained from piezoelectric force microscopy (PFM) investigations. It was found that the as-grown Nb-doped PZT has polarization orientated upward, while the Fe-doped PZT has polarization oriented mostly downward. This difference is explained by the change in the conduction type, thus in the sign of the carriers involved in the compensation of the depolarization field during the growth. In the Nb-doped film the majority carriers are electrons, which tend to accumulate to the growing surface, leaving positively charged ions at the interface with the bottom SrRuO3 electrode, thus favouring an upward orientation of polarization. For Fe-doped film the dominant carriers are holes, thus the sign of charges is opposite at the growing surface and the bottom electrode interface, favouring downward orientation of polarization. These findings open the way to obtain p-n ferroelectric homojunctions and suggest that PFM can be used to identify the type of conduction in PZT upon the dominant direction of polarization in the as-grown films.

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Section: Discussionmentioning

confidence: 99%

Controlling polarization direction in epitaxial Pb(Zr0.2Ti0.8)O3 films through Nb (n-type) and Fe (p-type) doping

Chirilă

Stancu

Boni

et al. 2022

Sci Rep

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“…The large deviation from ideality can be explained based on the presence of a series resistance included in the BtB-SD configuration. As recently demonstrated in the literature, the incorporation of a series resistance in the analysis of the BtB-SD structure results in large effective ideality factors. In our case, the origin of the series resistance is consistent with the amorphous Ga oxide region between the GaSe and the metallic contacts as observed in the TEM analysis (see Figure b).…”

Section: Resultsmentioning

confidence: 87%

Gallium Selenide Nanoribbons on Silicon Substrates for Photodetection

Hauchecorne

Gity

Martin

et al. 2021

ACS Appl. Nano Mater.

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Layered semiconductor gallium selenide (GaSe) is considered a potential candidate for optoelectronic applications because of its direct band gap. Monocrystalline material is, however, a prerequisite to fully exploit these properties in devices, where one-dimensional nano-objects could be considered as a model system. As a consequence of their large surface-to-volume ratio, nano-objects such as nanoribbons are interesting for photodetection applications. Here, we report the vapor−liquid− solid growth of GaSe nanoribbons by MOCVD on 300 mm silicon substrates. A growth model is proposed on the basis of a comprehensive study of the impact of the growth parameters on the nanoribbon morphology. The nanoribbon microstructure is investigated by HR-STEM and Raman spectroscopy characterizations. HR-STEM and TEM cross-sectional observations coupled with EDX analyses reveal a monocrystalline nanoribbon core covered with a native gallium-oxide shell. Test devices are made by contacting individual nanoribbon. The current versus voltage (I−V) characteristic obtained over a range of temperature (−50 to 100 °C) in the dark and under white light illumination is fitted on the basis of a back-to-back Schottky diode model. A stable and repeatable dynamic photoresponse is measured from the GaSe nanoribbons, with an I ON /I OFF ratio of 17 at room temperature.

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“…Figure 2a presents the I D -V bias characteristic curve of the DS diode at different back-gate voltages. For the DS diode to work as a diode, an asymmetric Schottky barrier height between the source and drain is necessary 19 – 22 . To satisfy this condition, we placed asymmetric graphene and graphite contacts with the monolayer MoS 2 channel with gates.…”

Section: Resultsmentioning

confidence: 99%

Dirac-source diode with sub-unity ideality factor

et al. 2022

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An increase in power consumption necessitates a low-power circuit technology to extend Moore’s law. Low-power transistors, such as tunnel field-effect transistors (TFETs), negative-capacitance field-effect transistors (NC-FETs), and Dirac-source field-effect transistors (DS-FETs), have been realised to break the thermionic limit of the subthreshold swing (SS). However, a low-power rectifier, able to overcome the thermionic limit of an ideality factor (η) of 1 at room temperature, has not been proposed yet. In this study, we have realised a DS diode based on graphene/MoS2/graphite van der Waals heterostructures, which exhibits a steep-slope characteristic curve, by exploiting the linear density of states (DOSs) of graphene. For the developed DS diode, we obtained η < 1 for more than four decades of drain current (ηave_4dec < 1) with a minimum value of 0.8, and a rectifying ratio exceeding 108. The realisation of a DS diode represents an additional step towards the development of low-power electronic circuits.

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Extraction and Analysis of the Characteristic Parameters in Back‐to‐Back Connected Asymmetric Schottky Diode

Cited by 12 publications

References 43 publications

Controlling polarization direction in epitaxial Pb(Zr0.2Ti0.8)O3 films through Nb (n-type) and Fe (p-type) doping

Controlling polarization direction in epitaxial Pb(Zr0.2Ti0.8)O3 films through Nb (n-type) and Fe (p-type) doping

Gallium Selenide Nanoribbons on Silicon Substrates for Photodetection

Dirac-source diode with sub-unity ideality factor

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