All-inorganic CsPbX3 (X = Cl, Br or I) perovskite nanocrystals have attracted extensive interest recently due to their exceptional optoelectronic properties. In an effort to improve the charge separation and transfer following efficient exciton generation in such nanocrystals, novel functional nanocomposites were synthesized by the in situ growth of CsPbBr3 perovskite nanocrystals on two-dimensional MXene nanosheets. Efficient excited state charge transfer occurs between CsPbBr3 NCs and MXene nanosheets, as indicated by significant photoluminescence (PL) quenching and much shorter PL decay lifetimes compared with pure CsPbBr3 NCs. The as-obtained CsPbBr3/MXene nanocomposites demonstrated increased photocurrent generation in response to visible light and X-ray illumination, attesting to the potential application of these heterostructure nanocomposites for photoelectric detection. The efficient charge transfer also renders the CsPbBr3/MXene nanocomposite an active photocatalyst for the reduction of CO2 to CO and CH4. This work provides a guide for exploration of perovskite materials in next-generation optoelectronics, such as photoelectric detectors or photocatalyst.
Electrical properties of Schottky contacts of Al on p-Si1−xGex alloys were investigated. The Si1−xGex strained layers were grown on p-Si substrates by using rapid thermal process/very low pressure-chemical vapor deposition. Low reverse currents were obtained. It was found that the Schottky barrier height of Al/p-Si1−xGex contacts decreased with increasing Ge fraction. The decrement is in accordance with the decrement of the band gap of the strained Si1−xGex. The Fermi level at the interface is pinned at about 0.43 eV below the conduction band. The influence of strain relaxation for SiGe alloy layers and the Si sacrificial cap layers on the properties of Schottky contacts were also investigated.
The physical Schottky parameters of devices based on Schottky contact are important to analyze the working mechanism. This article theoretically studies the parameter characteristics of the current-voltage curve of two back-to-back connected Schottky contacts via the thermionic emission model, and it is found that not all the parameters are able to be extracted under some constraints. Compared with some classical extraction methods, a straightforward strategy to approach the Schottky intrinsic parameters by solving equations during the characteristic interval are presented. In addition, this method is verified on several representative standard curves and experimental curves, and the extracted parameters are highly compatible with those curves. The current extraction method will be of great significance for the design and preparation of Schottky-based devices.
Aiming at the shortcomings of the traditional engineering experience in designing thin-film heat flow meters, such as low precision and long iteration time, the finite element analysis model of thin-film heat flow meters is established based on finite element simulation methods, and a double-type thin-film heat flow sensor based on a copper/concentrate thermopile is made. The influence of the position of the thermal resistance layer, heat flux density and thickness of the thermal resistance layer on the temperature gradient of the hot and cold ends of the heat flow sensor were comprehensively analyzed by using a simulation method. When the applied heat flux density is 50 kW/m2 and the thermal resistance layer is located above and below the thermopile, respectively, the temperature difference between the hot junction and the cold junction is basically the same, but comparing the two, the thermal resistance layer located above is more suitable for rapid measurements of heat flux at high temperatures. In addition, the temperature difference between the hot and cold contacts of the thin-film heat flux sensor increases linearly with the thickness of the thermal resistance layer. Finally, we experimentally tested the response–recovery characteristics of the sensors, with a noise of 2.1 μV and a maximum voltage output of 15 μV in a room temperature environment, respectively, with a response time of about 2 s and a recovery time of about 3 s. Therefore, the device we designed has the characteristic of double-sided use, which can greatly expand the scope of use and service life of the device and promote the development of a new type of heat flow meter, which will provide a new method for the measurement of heat flow density in the complex environment on the surface of the aero-engine.
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