Experimental Behavior of Single-Chip IGBT and COOLMOS Devices Under Repetitive Short-Circuit Conditions

Lefebvre, Stéphane; Khatir, Zoubir; Saint-Eve, Frédéric

doi:10.1109/ted.2004.842714

Cited by 75 publications

(32 citation statements)

References 8 publications

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“…From these results and under these test conditions, we may observe that for these tested devices, the ultimate device failure occurred always after about 1.5 ms whatever the short circuit duration when dissipated energy equals or exceeds critical one. These results obtained for a dissipated energy lightly higher than the critical value are completely different compared to those obtained for silicon devices [7,8] where the failure occurs after the turn-off process with a delay time depending on the short circuit duration.…”

Section: Robustness Testscontrasting

confidence: 80%

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Ageing of SiC JFET transistors under repetitive current limitation conditions

Berkani

Othman

Lefebvre

et al. 2010

Microelectronics Reliability

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Section: Robustness Testscontrasting

confidence: 80%

“…We have performed robustness tests in order to evaluate the critical energy which represents the limit of dissipated energy during short circuit phase for which failure occurs after only one short circuit [7].…”

Section: Robustness Testsmentioning

confidence: 99%

Ageing of SiC JFET transistors under repetitive current limitation conditions

Berkani

Othman

Lefebvre

et al. 2010

Microelectronics Reliability

Self Cite

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“…It has been reported that repetitive failures have two different sources: an external one which can be, for example, linked to faulty control signal [22] and an internal one, linked to physical degradation of the power semiconductor. Examples of these internal failures are: bond wire lift off, gate leakage failure and damages on semiconductors chip and solder [18], SiAl contact ageing [21], electro-migration effect [20], latch-up [23]. These internal failures can modify the operating state of the semiconductor and induce abnormal behavior like OC or SC states.…”

Section: Iipower Electronic Architecture Tolerant To Semiconductor Fmentioning

confidence: 99%

Space-Vector PWM Control Synthesis for an H-Bridge Drive in Electric Vehicles

Kolli¹,

Béthoux

Bernardinis³

et al. 2013

IEEE Trans. Veh. Technol.

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Abstract-This paper deals with a synthesis of Space Vector PWM control methods applied for a H-bridge inverter feeding a 3-phase Permanent Magnet Synchronous Machine in Electric Vehicle application. First, a short survey of existing power converter architectures, especially those adapted to degraded operating modes, is presented. Standard SVPWM control methods are compared with three innovative ones using EV-drive specifications in the normal operating mode. Then, a rigorous analysis of the margins left in the control strategy is presented for a semiconductor switch failure to fulfill degraded operating modes. Finally, both classic and innovative strategies are implemented in numerical simulation; their results are analyzed and discussed. Index Terms-Motor drives, Inverters, Space vector pulse width modulation (SVPWM), Permanent magnet machines, Semiconductor device reliability I.INTRODUCTIONPower converters are increasingly used in automotive applications for many reasons such as power conditioning, power management, and consumption reduction. As for any embedded transportation system, these power converters are subject to severe constraints especially regarding compactness and vehicle integration. More specifically electric vehicles (EVs) require a high degree of availability (continuity of service). In particular the constraining automotive environment is characterized by severe traction-braking cycles which induce power and thermal cycling during running phases of the vehicle [1]- [2]. Indeed, thermo-mechanical stresses have a significant impact on the lifetime power switches [3]. Consequently, there is a degradation of the semiconductor devices, which finally forces them into a failed state: short-circuit (SC) or open-circuit (OC) [2]. Such failures occurring on single power switches can affect the function of power converters and spread through the traction chain elements. It is then necessary to first isolate the fault, confine it and lastly reconfigure the control algorithms to operate in the presence of the fault. Obviously, the topology of the power converters or the power chain must be adapted to allow operation in degraded mode:-by associating a fourth additional half bridge in a three-phase inverter topology connected to the neutral point of the electric motor [4]. IFSTTAR/COSYS/LTN-Laboratoire des Technologies Nouvelles 2 LGEP-Laboratoire de Génie Electrique de Paris-by using multilevel inverters topologies used in a high power traction drive [5].-by redistributing the control efforts in a four-wheel independently driven electric vehicles [6]… Furthermore, faults may also happen on sensors and can be taken into account by active fault-tolerant control systems. For example in [7]-[8], authors consider a high-performance induction-motor drive for an EV or a hybrid one (HEV). The proposed systems detect a sensor loss or a sensor recovery and dynamically change its strategies to sustain the best control performances.Besides, faults may also occur in the electrical machine and can be considered using fa...

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“…It has been demonstrated that their limits in operation are mainly thermal [1,2], as their manufacturing trends target at thinner dies and smaller cell pitch [3]. This increases the power density generated within them under operating conditions.…”

Section: Introductionmentioning

confidence: 99%