Ageing of SiC JFET transistors under repetitive current limitation conditions

Berkani, Mounira; Othman, Dhouha; Lefebvre, Stéphane; Moumen, Sabrine; Khatir, Zoubir; Sallah, T. Ben

doi:10.1016/j.microrel.2010.07.035

Cited by 19 publications

(10 citation statements)

References 9 publications

(13 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Characterizations have been performed after the test and a slight reduction of the saturation current of the JFET and a slight increase in the R DSon are noted (see Table I). These results correspond to a normal case [17]. This phenomenon is probably due to ageing of the metallization of the power JFET [18].…”

Section: Resultssupporting

confidence: 75%

A 200 °C Safety System at Power-Up of Normally On SiC JFETs Inverters

Risaletto

Bergogne

Dubois

et al. 2014

IEEE Trans. Power Electron.

View full text Add to dashboard Cite

Silicon carbide (SiC) power devices are the only commercialized components to run at high voltage and high temperature. Normally on junction field-effect transistors (JFETs) have lower on-state resistance and lower output capacitance than other SiC switches, which reduces conduction and switching losses. However, normally on power devices induce a short-circuit in voltagefed inverters (VFI) when the gate driver is not powered prior to the bus supply. This is a power-up limitation that has not received much attention in the literature, especially for safety systems that can be used in an integrated circuit capable of running at elevated temperature. This paper describes an original solution based on SiC JFETs to secure the inverter operation at power-up without gate driver supply for the SiC JFETs. The reliability test of the protection circuit and his impact on the ageing of the JFET of the VFI are also presented. The safety system is capable of running in elevated ambient temperatures. Experimental results have been carried out in a 540 V, 10 A inverter and at ambient temperatures from 27 to 200 • C.Index Terms-Experimental circuit, high-temperature power electronics, normally on devices protection, SiC junction fieldeffect transistor (JFET), voltage-fed inverter (VFI).

show abstract

Section: Resultssupporting

confidence: 75%

A 200 °C Safety System at Power-Up of Normally On SiC JFETs Inverters

Risaletto

Bergogne

Dubois

et al. 2014

IEEE Trans. Power Electron.

View full text Add to dashboard Cite

show abstract

“…Such a low heat diffusion distance reveals that the short circuit capability of SiC MOSFETs can be independent of packaging technologies and external cooling conditions. Moreover, the concentrated heat generated within the depletion region could cause the degradation or even damage of the gate oxide and metallization layer [38]. The leakage current of the three devices can be calculated from the junction temperature information.…”

Section: E Simulation Resultsmentioning

confidence: 99%

Temperature-Dependent Short-Circuit Capability of Silicon Carbide Power MOSFETs

Wang

Shi

Tolbert

et al. 2016

IEEE Trans. Power Electron.

215

View full text Add to dashboard Cite

This paper presents a comprehensive short circuit ruggedness evaluation and numerical investigation of up-to-date commercial silicon carbide (SiC) MOSFETs. The short circuit capability of three types of commercial 1200 V SiC MOSFETs is tested under various conditions, with case temperatures from 25 o C to 200 o C and DC bus voltages from 400 V to 750 V. It is found that the commercial SiC MOSFETs can withstand short circuit current for only several microseconds with a DC bus voltage of 750 V and case temperature of 200 o C. The experimental short circuit behaviors are compared and analyzed through numerical thermal dynamic simulation. Specifically, an electro-thermal model is built to estimate the device internal temperature distribution, considering the temperature dependent thermal properties of SiC material. Based on the temperature information, a leakage current model is derived to calculate the main leakage current components (i.e. thermal, diffusion, and avalanche generation currents). Numerical results show that the short circuit failure mechanisms of SiC MOSFETs can be thermal generation current induced thermal runaway or high temperature related gate oxide damage.

show abstract

“…In [8], a 3D model of a SiC JFET, its solder, and base plate is proposed but no other 3D element (e.g. inhomogeneous current distribution) is modelled -except for In [9], a 3D model, including the die, its solder and a baseplate, is used.…”

Section: Literature Reviewmentioning

confidence: 99%

“…SPICE) [5]- [7] or using a dedicated Finite Element (FE) software (e.g. Ansys) [2], [4], [8]- [10]. Although the first approach is a priori much faster, it is usually limited to a few thousands nodes (and often far less), leading to moderate accuracy.…”

Section: Introductionmentioning

confidence: 99%

Thermal simulations of SiC MOSFETs under short-circuit conditions: influence of various simulation parameters

Pascal

Petit

Labrousse

et al. 2019

2019 IEEE International Workshop on Integrated Power Packaging (IWIPP)

View full text Add to dashboard Cite

The temperature distribution in a Silicon Carbide (SiC) MOSFET during a destructive short-circuit is simulated using a custom 1D-finite difference model implemented using Matlab. Some of the main assumptions usually put forward in the literature dealing with this kind of simulations are tested in this paper. We show that some of those simplifications (model of the heat source, die top-side boundary conditions, etc.), sometime in-spite of common sense, have a great impact on the simulated temperature.

show abstract

Ageing of SiC JFET transistors under repetitive current limitation conditions

Cited by 19 publications

References 9 publications

A 200 °C Safety System at Power-Up of Normally On SiC JFETs Inverters

A 200 °C Safety System at Power-Up of Normally On SiC JFETs Inverters

Temperature-Dependent Short-Circuit Capability of Silicon Carbide Power MOSFETs

Thermal simulations of SiC MOSFETs under short-circuit conditions: influence of various simulation parameters

Contact Info

Product

Resources

About