Thermal simulations of SiC MOSFETs under short-circuit conditions: influence of various simulation parameters

Pascal, Yoann; Petit, Mickaël; Labrousse, Denis; Costa, François

doi:10.1109/iwipp.2019.8799085

Cited by 6 publications

(4 citation statements)

References 29 publications

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“…Note this one greatly exceeds 1000K after 10µs. Such a temperature level is in agreement with recent publications using the same modelling approach but on different chips' size [16] or considering a different VDS bias [17].…”

Section: First Validation Of the Electro-thermal Modelsupporting

confidence: 91%

“…4 show that it allows to simulate by a quasi-plateau corresponding to the quantity of latent energy to be dissipated in order to produce the Al layer phase change. [16] recently proposed the same modelling approach based on our work by including a sensitivity study to the physical parameters. Concerning the circuit-based electro-thermal modelling of the DUT, these curves are fitted by a Cauer's line of 8 elements with constant parameters to easily allow an integration in PLECS™.…”

Section: = ∫ −∞ (6)mentioning

confidence: 99%

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Circuit-type modelling of SiC power Mosfet in short-circuit operation including selective fail-to-open and fail-to-short modes competition

Richardeau

Boige

2019

Microelectronics Reliability

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SiC Mosfet has very unique properties in extreme operation such as a well-known fail-to-short failure mode but in competition with a lesser known fail-to-open failure mode. These two modes are generally studied and modelled separately, whereas, in practice, they are coupled with the junction temperature of the chip. This paper presents a circuit-type modelling approach of these two modes simultaneously. This modelling allows to simulate the selectivity and competition between these two modes, one is clearly critical and the other is advantageously safe. The proposed model is then compared with short-circuit test of 1.2kV-80m MOSFET SiC.

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Section: First Validation Of the Electro-thermal Modelsupporting

confidence: 91%

Section: = ∫ −∞ (6)mentioning

confidence: 99%

Circuit-type modelling of SiC power Mosfet in short-circuit operation including selective fail-to-open and fail-to-short modes competition

Richardeau

Boige

2019

Microelectronics Reliability

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“…Based on the results of TCAD simulations in this section we propose a simple thermal model that reproduces the real temperature dependence of I D and provides the hot spot temperature (T max ) inside the device. Due to the fast dynamic of the SC event, the device can be considered an adiabatic system where the heat transfer is strongly constrained in the first layers of the structure, not involving the case and the environment [26]. This consideration allows us to derive a simple thermal model with a single time constant.…”

Section: Proposed Modelmentioning

confidence: 99%

A Simple Thermal Model for Junction and Hot Spot Temperature Estimation of 650 V GaN HEMT during Short Circuit

Palazzo,

Sanseverino,

Canale Parola

et al. 2024

Electronics

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Temperature is a critical parameter for the GaN HEMT as it sharply impacts the electrical characteristics of the device more than for SiC or Si MOSFETs. Either when designing a power converter or testing a device for reliability and robustness characterizations, it is essential to estimate the junction temperature of the device. For this aim, manufacturers provide compact models to simulate the device in SPICE-based simulators. These models provide the junction temperature, which is considered uniform along the channel. We demonstrate through two-dimensional numerical simulations that this approach is not suitable when the device undergoes high electrothermal stress, such as during short circuit (SC), when the temperature distribution along the channel is strongly not uniform. Based on numerical simulations and experimental measurements on a 650 V/4 A GaN HEMT, we derived a thermal network suitable for SPICE simulations to correctly compute the junction temperature and the SC current, even if not providing information about the possible failure of the device due to the formation of a local hot spot. For this reason, we used a second thermal network to estimate the maximum temperature reached inside the device, whose results are in good agreement with the experimental observed failures.

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“…The physical density, thermal conductivity, and specific heat of SiC material are listed as (1) (3) [17]. The thermal properties of the other materials are summarized in Table I [18]. Table II provides the mechanical properties of the materials [19].…”

Section: Approach and Simulation Modelmentioning

confidence: 99%

A Mitigation Strategy for the Short-Circuit Degradation in SiC MOSFETs

Iannuzzo

2020

2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

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The demand for highly reliable SiC MOSFETs is growing in the field applications, especially considering the short-circuit conditions. With the development of faster protection, short-circuit faults may occur many times within its expected service life, which only causes short-circuit degradation, rather than destructive failure. Based on finite element method simulation and experimental waveforms, this paper investigates the thermal and mechanical behavior of SiC MOSFET during short-circuit conditions, aiming to propose a package-level strategy to mitigate this short-circuit degradation and the results indicate that the front package design with sintered copper foil could be an effective approach.

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Thermal simulations of SiC MOSFETs under short-circuit conditions: influence of various simulation parameters

Cited by 6 publications

References 29 publications

Circuit-type modelling of SiC power Mosfet in short-circuit operation including selective fail-to-open and fail-to-short modes competition

Circuit-type modelling of SiC power Mosfet in short-circuit operation including selective fail-to-open and fail-to-short modes competition

A Simple Thermal Model for Junction and Hot Spot Temperature Estimation of 650 V GaN HEMT during Short Circuit

A Mitigation Strategy for the Short-Circuit Degradation in SiC MOSFETs

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