Comparison of temperature limits for Trench silicon IGBT technologies for medium power applications

Perpiñà, X.; Jordà, X.; León, Javier; Vellvehı́, M.; Antón, Daniel; Llorente, S.

doi:10.1016/j.microrel.2014.07.155

Cited by 7 publications

(3 citation statements)

References 6 publications

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“…More specifically, two potential short-circuit failure modes that limit the device short-circuit endurance time tw are illustrated in Fig.13. One is the thermal runaway failure during the steady state ( ○ 7 ), the other one is the thermal runaway failure during the blocking state ( ○ 8 ) [26,[50][51]. Both of them are initiated by the thermal accumulation during the short-circuit pulse without any other failure mechanism setting in.…”

Section: Short-circuit Endurance Time Limiting Groupmentioning

confidence: 99%

Investigation and Classification of Short-Circuit Failure Modes Based on Three-Dimensional Safe Operating Area for High-Power IGBT Modules

Chen

Iannuzzo

et al. 2018

IEEE Trans. Power Electron.

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IGBT short-circuit failure modes have been under research for many years, successfully paving the way for device short-circuit ruggedness improvement. The aim of this paper is to classify and discuss the recent contributions about IGBT short-circuit failure modes, in order to establish the current state of the art and trends in this area. First, a 3D-SCSOA is introduced as the IGBT's operational boundary to divide the short-circuit failure modes of device into short-circuit VDC/Vrated-ISC SOA limiting and short-circuit endurance time limiting groups. Then, the discussion is centered on currently reported IGBT short-circuit failure modes in terms of their relationships with the 3D-SCSOA characteristics. In addition, further investigation on the interaction of 3D-SCSOA characteristics is implemented to motivate advanced contributions in future dependency research of device short-circuit failure modes on temperature. Consequently, a comprehensive and thoughtful review of where the development of short-circuit failure mode researches of IGBT stands and is heading is provided.Index terms-High power IGBTs, Short-circuit failure mode, 3D-SCSOA, Self-heating, Temperature dependencyNone of the material in this paper has been published or is under consideration for publication elsewhere.

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Section: Short-circuit Endurance Time Limiting Groupmentioning

confidence: 99%

Investigation and Classification of Short-Circuit Failure Modes Based on Three-Dimensional Safe Operating Area for High-Power IGBT Modules

Chen

Iannuzzo

et al. 2018

IEEE Trans. Power Electron.

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“…Conventional IGBTs can be operated at higher current densities with lower frequency while the MOSFETs have better efficiency at higher operating frequencies over 100 kHz. In contrast, recently developed SiC MOSFETs have much smaller channel mobility compared to conventional ones [17]- [18] which reflects increase in total cost. On the other hand, the thermal conductivity of SiC is much higher than that for silicon [18], so dissipated heat can easily be removed from the device.…”

Section: Introductionmentioning

confidence: 95%

“…In contrast, recently developed SiC MOSFETs have much smaller channel mobility compared to conventional ones [17]- [18] which reflects increase in total cost. On the other hand, the thermal conductivity of SiC is much higher than that for silicon [18], so dissipated heat can easily be removed from the device. Regardless promising material properties of SiC, Si devices can still be more reliable and economically efficient based on the current rating and switching frequency of a specific application [19].…”

Section: Introductionmentioning

confidence: 95%

Towards More Reliable Renewable Power Systems - Thermal Performance Evaluation of DC/DC Boost Converters Switching Devices

Batunlu

Albarbar

2015

IJPEDS

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<span style="font-family: "Times New Roman",serif; font-size: 10pt; mso-fareast-language: EN-US; mso-fareast-font-family: Calibri; mso-fareast-theme-font: minor-latin; mso-ansi-language: EN-GB; mso-bidi-language: AR-SA;">Power electronic converters (PECs) are one of the most important elements within renewable power generation systems. The reliability of switching elements of PECs is still below expectations and is a major contributor to the downtime of renewable power generation systems. Conventional technology based elements such as Silicon Insulated Gate Bipolar Transistors (IGBTs) operate as switching components in PECs. Recent topological improvements have led to new devices called Silicon Carbide (SiC) MOSFETs which, are also being used as switching elements for PECs. This paper presents detailed investigations into the performance of those switching devices with a focus on their reliability and thermal characteristics. Namely, trench gate NPT, FS IGBT topologies and SiC MOSFET are firstly modelled using 3-D multi-physics finite element modelling to gain clear understanding of their thermal behaviour. Subsequently, modelling outcomes are verified by using those devices as switching elements in operational boost converters. The purposely-developed test setups are utilised to critically assess the performances of those switching devices under different loading and environmental conditions. In general, <span style="font-family: "Times New Roman",serif; font-size: 10pt; mso-fareast-language: EN-GB; mso-fareast-font-family: Calibri; mso-fareast-theme-font: minor-latin; mso-ansi-language: EN-GB; mso-bidi-language: AR-SA;">SiC device was found to exhibit about 20 °C less in its operating temperature and therefore expected to offer more reliable switching element.

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Comparison of thermal runaway limits under different test conditions based on a 4.5kV IGBT

Reigosa

Prindle

Pâques

et al. 2016

Microelectronics Reliability

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Comparison of temperature limits for Trench silicon IGBT technologies for medium power applications

Cited by 7 publications

References 6 publications

Investigation and Classification of Short-Circuit Failure Modes Based on Three-Dimensional Safe Operating Area for High-Power IGBT Modules

Investigation and Classification of Short-Circuit Failure Modes Based on Three-Dimensional Safe Operating Area for High-Power IGBT Modules

Towards More Reliable Renewable Power Systems - Thermal Performance Evaluation of DC/DC Boost Converters Switching Devices

Comparison of thermal runaway limits under different test conditions based on a 4.5kV IGBT

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