Evolution of the surface morphology of AlN epitaxial film by HVPE

Gong, X. G.; Xu, Ke; Huang, Jun; Liu, Ting; Ren, Guoqiang; Wang, Jianfeng; Zhang, Jicai

doi:10.1016/j.jcrysgro.2014.10.012

Cited by 10 publications

(5 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Besides, the growth rate is The surface morphology of AlN grown at initial stage [45] . (c) 1200 nm grown on sapphire substrates [44] .…”

Section: Ht-hvpementioning

confidence: 99%

“…In 2016, Zhang et al [44] reported the influence of the initial growth condition of AlN thin films grown on various substrates by the low-temperature HVPE. The substrates include 6H-SiC, GaN/sapphire templates and sapphire.…”

mentioning

confidence: 99%

“…8. (Color online) The AFM pictures of AlN with various thickness (a) 390, (b) 650,(c) 1200 nm grown on sapphire substrates[44] .…”

mentioning

confidence: 99%

See 2 more Smart Citations

The fabrication of AlN by hydride vapor phase epitaxy

Sun

Zhang

et al. 2019

J. Semicond.

Self Cite

View full text Add to dashboard Cite

Aluminum nitride (AlN) is the promising substrates material for the epitaxial growth of III-nitrides devices, such as high-power, high-frequency electronic, deep ultraviolet optoelectronics and acoustic devices. However, it is rather difficult to obtain the high quality and crack-free thick AlN wafers because of the low surface migration of Al adatoms and the large thermal and lattice mismatches between the foreign substrates and AlN. In this work, the fabrication of AlN material by hydride vapor phase epitaxy (HVPE) was summarized and discussed. At last, the outlook of the production of AlN by HVPE was prospected.

show abstract

“…Besides, the growth rate is The surface morphology of AlN grown at initial stage [45] . (c) 1200 nm grown on sapphire substrates [44] .…”

Section: Ht-hvpementioning

confidence: 99%

mentioning

confidence: 99%

See 1 more Smart Citation

The fabrication of AlN by hydride vapor phase epitaxy

Sun

Zhang

et al. 2019

J. Semicond.

Self Cite

View full text Add to dashboard Cite

show abstract

“…In previous reports, both AlN and GaN high-quality thick films have been prepared by HVPE. [37][38][39] However, the research of h-BN grown by HVPE is still in the early stages. Nicolas Coudurier reported h-BN films grown by HVPE in 2013, but the films were dominated by the amorphous or turbostratic BN (t-BN).…”

Section: Introductionmentioning

confidence: 99%

Influence of sapphire substrate with miscut angles on hexagonal boron nitride films grown by halide vapor phase epitaxy

et al. 2023

Self Cite

View full text Add to dashboard Cite

show abstract

“…AlN bulk crystals are promising as substrates of AlGaN-based deep ultraviolet light emitters and high-frequency electronic devices with high-breakdown voltages. Currently, AlN substrates are fabricated mainly by the physical vapor transport method [1][2][3][4][5] and hydride vapor phase epitaxy method [6][7][8][9][10]. To lower costs, increase the diameter, and improve the crystalline qualities, these methods must be refined.…”

Section: Introductionmentioning

confidence: 99%

Effects of Al and N2 Flow Sequences on the Interface Formation of AlN on Sapphire by EVPE

2017

View full text Add to dashboard Cite

The interface formation mechanisms of AlN films on sapphire substrates grown by the elementary source vapor phase epitaxy (EVPE) method, which is a new AlN bulk fabrication method using Al and N 2 as precursors, are investigated. Supplying N 2 after the substrate temperature reaches the growth temperature [Process N 2 (GT)] causes the interface to become rough due to the thermal decomposition of sapphire. Self-separation occasionally occurs with the Process N 2 (GT), suggesting that the rough interface generates self-separating films with little strain. On the other hand, supplying N 2 beginning at room temperature forms a relatively smooth interface with voids, which can be realized by the reaction between a nitrided sapphire surface and an Al source.

show abstract

Evolution of the surface morphology of AlN epitaxial film by HVPE

Cited by 10 publications

References 13 publications

The fabrication of AlN by hydride vapor phase epitaxy

The fabrication of AlN by hydride vapor phase epitaxy

Influence of sapphire substrate with miscut angles on hexagonal boron nitride films grown by halide vapor phase epitaxy

Effects of Al and N2 Flow Sequences on the Interface Formation of AlN on Sapphire by EVPE

Contact Info

Product

Resources

About