The fabrication of AlN by hydride vapor phase epitaxy

Abstract

Aluminum nitride (AlN) is the promising substrates material for the epitaxial growth of III-nitrides devices, such as high-power, high-frequency electronic, deep ultraviolet optoelectronics and acoustic devices. However, it is rather difficult to obtain the high quality and crack-free thick AlN wafers because of the low surface migration of Al adatoms and the large thermal and lattice mismatches between the foreign substrates and AlN. In this work, the fabrication of AlN material by hydride vapor phase epitaxy (HVPE) was summarized and discussed. At last, the outlook of the production of AlN by HVPE was prospected.

Fabrication of a freestanding AlN substrate via HVPE homoepitaxy on a PVT-AlN substrate

“…Hexagonal AlN has a direct bandgap of approximately 6 eV, a high thermal conductivity, and lattice and thermal parameters that closely resemble those of Al x Ga 1−x N alloys with a high aluminum content [1,2]. With advantageous qualities including low size, weight, and operating power, AlGaNbased UV devices have the potential to replace traditional UV sources such as mercury lamps in applications ranging from water purification to fluorescence-based bioagent sensing 5 These authors contributed equally.…”

Effect of High-Temperature Nitridation and Buffer Layer on Semi-Polar (10–13) AlN Grown on Sapphire by HVPE

“…At present, the effect of the buffer layer on the quality of polar AlN crystals has been widely confirmed [24][25][26][27]. In addition, compared with metalorganic chemical vapor deposition (MOCVD), hydride vapor phase epitaxy (HVPE) is more suitable for AlN substrate due to the high growth rate and low cost [28]. However, the comprehensive influence of high-temperature nitridation and high-temperature buffer layer on the semi-polar AlN film grown by HVPE has not yet been clarified.…”

Influence of Different Heater Structures on the Temperature Field of AlN Crystal Growth by Resistance Heating

“…In recent years, ultra-wide bandgap semiconductor materials represented by aluminum nitride (AlN) have been widely used in different fields due to their excellent high-frequency power characteristics, stable high-temperature performance, low energy loss, and good UV transmittance [ 1 , 2 , 3 ]. Therefore, it has great application prospects in the fields of high-efficiency optoelectronic devices, high-power high-frequency electronic devices, ultra-high voltage power electronic devices, deep ultraviolet warning and guidance, and deep ultraviolet light-emitting diode (DUV LED) disinfection [ 4 , 5 , 6 , 7 , 8 ].…”

“…The comprehensive performance is 10–15 times that of SiC and GaN power devices. So far, a variety of methods have been developed to prepare AlN crystals, which mainly include hydride vapor phase epitaxy (HVPE) [ 3 ], molecular beam epitaxy (MBE), metal organic compound vapor deposition (MOCVD), solution growth, physical vapor transport (PVT) [ 2 , 10 ], and so on. The PVT method has the advantages of a simple growth process, fast growth rate, low dislocation density, good crystal integrity, and high safety, and has been proven to be one of the most effective methods for the preparation of AlN bulk single crystals [ 10 , 11 , 12 , 13 , 14 ].…”