Effect of High-Temperature Nitridation and Buffer Layer on Semi-Polar (10–13) AlN Grown on Sapphire by HVPE

Abstract

We have investigated the effect of high-temperature nitridation and buffer layer on the semi-polar aluminum nitride (AlN) films grown on sapphire by hydride vapor phase epitaxy (HVPE). It is found the high-temperature nitridation and buffer layer at 1300 °C are favorable for the formation of single (10–13) AlN film. Furthermore, the compressive stress of the (10–13) single-oriented AlN film is smaller than polycrystalline samples which have the low-temperature nitridation layer and buffer layer. On the one hand, the improvement of (10–13) AlN crystalline quality is possibly due to the high-temperature nitridation that promotes the coalescence of crystal grains. On the other hand, as the temperature of nitridation and buffer layer increases, the contents of N-Al-O and Al-O bonds in the AlN film are significantly reduced, resulting in an increase in the proportion of Al-N bonds.

Nonporous Oxide-Terminated Multicomponent Bulk Anode Enabling Energy-Dense Sodium-Ion Batteries

“…In addition, it was confirmed that Al–C, Al–N (or Al–N–C), and N–Al–O bonds exist in the OTM. , During the carbonization of PAN on the AlSb surface, Al migrates to the defect sites of the carbonizing PAN to form Al–C and Al–N bonds . Amorphous Al x O y with oxygen vacancies forms sodiophilic Al–N- and O–Al–N-type bonds in the presence of nitrogen. − Such chemical bonds improve the integration between AlSb (with an oxide layer) and N-doped carbon and support the structural stability of the OTM even after battery cycling. Therefore, the OTM is not simply a physically stacked configuration of Sb/AlSb/oxide/N-doped carbon but a form of a chemically integrated structure that formed via multiple intimate junctions.…”

Semipolar (11–22) AlN Films Grown by Hydride Vapor Phase Epitaxy for Schottky Barrier Diodes

“…21,22 In comparison to prevalent epitaxial methods like MBE and MOCVD for (11− 22) AlN film growth, HVPE offers advantages such as rapid growth, cost-effectiveness, and high growth temperature, making it ideal for producing large-size high-quality AlN thick films. 23 However, there are limited reports on HVPE epitaxial growth of (11−22) AlN due to the challenges in controlling the process posed by the rapid growth rate. Here, we develop a homemade HVPE system that utilizes induction heating to reach a high temperature of 1480 °C.…”

“…As bulk substrates are scarce, semipolar (11–22) AlN films are commonly heteroepitaxially grown on m-plane sapphire substrates using MOCVD, molecular beam epitaxy (MBE), and HVPE. Unfortunately, high-quality semipolar AlN is more difficult to produce than polar AlN because of the anisotropic migration of adsorbed atoms on the growth surface and the mismatch introduced by heteroepitaxy. , In comparison to prevalent epitaxial methods like MBE and MOCVD for (11–22) AlN film growth, HVPE offers advantages such as rapid growth, cost-effectiveness, and high growth temperature, making it ideal for producing large-size high-quality AlN thick films . However, there are limited reports on HVPE epitaxial growth of (11–22) AlN due to the challenges in controlling the process posed by the rapid growth rate.…”

Editorial for the Special Issue on Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II

“…Two papers [ 15 , 16 ] cover advanced processing techniques. The remaining papers [ 17 , 18 , 19 , 20 , 21 , 22 , 23 ] explore the properties and growth techniques of emerging WBG materials.…”

“…Regarding the properties and growth of emerging WBG materials, a methodology to synthesize gallium nitride nanoparticles by combining crystal growth with thermal vacuum evaporation is proposed by Fathy et al in [ 22 ]. AlN is explored as an ultra WBG material in three papers: annealing Ni/AlN/SiC Schottky barrier diodes in an atmosphere of nitrogen and oxygen is shown to lead to a significant improvement in the electrical properties of the structures by Kim et al in [ 19 ]; the effect of high-temperature nitridation and a buffer layer on semi-polar AlN films grown on sapphire by hydride vapor phase epitaxy is studied by Zhang et al [ 21 ]; and the thermal annealing of AlN films with different polarities and its impact on crystal quality are studied by in Yue et al in [ 23 ]. The effect of the annealing temperature on the microstructure and performance of sol-gel-prepared NiO films for electrochromic applications is analyzed by Shi et al in [ 17 ].…”