Influence of Different Heater Structures on the Temperature Field of AlN Crystal Growth by Resistance Heating

Abstract

Based on the actual hot zone structure of an AlN crystal growth resistance furnace, the global numerical simulation on the heat transfer process in the AlN crystal growth was performed. The influence of different heater structures on the growth of AlN crystals was investigated. It was found that the top heater can effectively reduce the axial temperature gradient, and the side heater 2 has a similar effect on the axial gradient, but the effect feedback is slightly weaker. The axial temperature gradient tends to increase when the bottom heater is added to the furnace, and the adjustable range of the axial temperature gradient of the side 1 heater + bottom heater mode is the largest. Our work will provide important reference values for AlN crystal growth by the resistance method.

Effect of High-temperature Annealing on AlN Crystal Grown by PVT Method

“…With the development of first-generation silicon semiconductor materials and the second-generation GaAs semiconductor materials, the application of its devices has also reached the limit. As a representative of the third-generation semiconductor materials, aluminum nitride (AlN) has the advantages of wide band gap, high critical breakdown electric field, high thermal conductivity, good ultraviolet transmittance and strong radiation resistance [1][2][3] . Therefore, AlN crystals have broad application prospects in the fields of high-power highfrequency electronic devices and deep ultraviolet lightemitting devices [4][5][6] .…”