Influence of sapphire substrate with miscut angles on hexagonal boron nitride films grown by halide vapor phase epitaxy

Chen, Minghao; Zhang, Qian; Fang, Chaoyang; Shen, Zhipeng; Lu, Yuhao; Liu, Ting; Tan, Shuxin; Zhang, J.L.

doi:10.1039/d3ce00528c

CrystEngComm

2023

DOI: 10.1039/d3ce00528c

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Influence of sapphire substrate with miscut angles on hexagonal boron nitride films grown by halide vapor phase epitaxy

Minghao Chen

Qian Zhang

Chaoyang Fang

et al.

Abstract: (002) hexagonal boron nitride (h-BN) micron films were epitaxially grown on c-plane sapphire substrates with miscut angles to m-plane (m-miscut angle) by high-temperature and low-pressure halide vapor phase epitaxy.

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Influence of sapphire substrate with miscut angles on hexagonal boron nitride films grown by halide vapor phase epitaxy

Abstract: (002) hexagonal boron nitride (h-BN) micron films were epitaxially grown on c-plane sapphire substrates with miscut angles to m-plane (m-miscut angle) by high-temperature and low-pressure halide vapor phase epitaxy.

Cited by 0 publications

References 55 publications

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