1998
DOI: 10.1016/s0925-9635(98)00216-7
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Epitaxial nucleation of diamond on an iridium substrate by bias treatment, for microwave plasma-assisted chemical vapor deposition

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Cited by 33 publications
(9 citation statements)
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“…This suggests that diamond nuclei are somehow protected from the CVD plasma during the BEN step. A pseudo-2D growth mode was subsequently reported during the growth step [3,4]. This finding may explain the higher crystalline quality of the epitaxial diamond layers that were grown on iridium [1,5,6].…”
Section: Introductionmentioning
confidence: 89%
“…This suggests that diamond nuclei are somehow protected from the CVD plasma during the BEN step. A pseudo-2D growth mode was subsequently reported during the growth step [3,4]. This finding may explain the higher crystalline quality of the epitaxial diamond layers that were grown on iridium [1,5,6].…”
Section: Introductionmentioning
confidence: 89%
“…In [9,10] a sharpened molybdenum rod was used as electrode to induce diamond nucleation in a microwave plasma. After BEN circular islands with a lateral size of several μm and a height of 2-3 nm were observed by SEM and AFM, respectively.…”
Section: Introductionmentioning
confidence: 99%
“…In this method, diamond is nucleated by the application of a negative bias for a short period of time. This potential accelerates carbon reactive species to substrate surface, forming sp 3 and sp 2 hybridization nuclei for growth; as soon as the bias is turned off, atomic hydrogen etches nondiamond phases and only the diamond oriented particles grow until they coalesce and form a continuous oriented film [86][87][88][89][90][91].…”
Section: Cvd Diamond Heat Sinksmentioning
confidence: 99%