Development, Properties, and Applications of CVD Diamond-Based Heat Sinks

Wide and ultrawide-bandgap (U/WBG) materials have garnered significant attention within the semiconductor device community due to their potential to enhance device performance through their substantial bandgap properties. These exceptional material characteristics can enable more robust and efficient devices, particularly in scenarios involving high power, high frequency, and extreme environmental conditions. Despite the promising outlook, the physics of UWBG materials remains inadequately understood, leading to a notable gap between theoretical predictions and experimental device behavior. To address this knowledge gap and pinpoint areas where further research can have the most significant impact, this review provides an overview of the progress and limitations in U/WBG materials. The review commences by discussing Gallium Nitride, a more mature WBG material that serves as a foundation for establishing fundamental concepts and addressing associated challenges. Subsequently, the focus shifts to the examination of various UWBG materials, including AlGaN/AlN, Diamond, and Ga2O3. For each of these materials, the review delves into their unique properties, growth methods, and current state-of-the-art devices, with a primary emphasis on their applications in power and radio-frequency electronics.

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Impact of Die Carrier on Reliability of Power LEDs

Kyatam

Alves

Maslovski

et al. 2021

IEEE J. Electron Devices Soc.

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High power light emitting diodes (LEDs) suffer from heating effects that have a detrimental impact on the devices characteristics. The use of LED carriers with high thermal conductivity promotes the extraction of heat away from the LED junction. Different materials can be used for this purpose, such as alumina, aluminium nitride, and silicon. Diamond has also been gaining momentum for demanding heat management applications. In order to evaluate the impact of the carrier material on the reliability of the devices, the junction temperature of Cree® white XLamp® XB-D LEDs was obtained with Ansys for various carriers and different LED current levels. The impact of the junction temperature on the LED's lifetime, emission intensity, footprint, and wavelength stability was then evaluated for each carrier based on the datasheet of the devices. The results provide additional knowledge regarding the impact of the carrier on the performance of the LED.

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Development, Properties, and Applications of CVD Diamond-Based Heat Sinks

Cited by 4 publications

References 102 publications

A silicon-diamond microchannel heat sink for die-level hotspot thermal management

A silicon-diamond microchannel heat sink for die-level hotspot thermal management

From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices

Impact of Die Carrier on Reliability of Power LEDs

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