Thermoelectric devices that are flexible and optically transparent hold unique promise for future electronics. However, development of invisible thermoelectric elements is hindered by the lack of p-type transparent thermoelectric materials. Here we present the superior room-temperature thermoelectric performance of p-type transparent copper iodide (CuI) thin films. Large Seebeck coefficients and power factors of the obtained CuI thin films are analysed based on a single-band model. The low-thermal conductivity of the CuI films is attributed to a combined effect of the heavy element iodine and strong phonon scattering. Accordingly, we achieve a large thermoelectric figure of merit of ZT=0.21 at 300 K for the CuI films, which is three orders of magnitude higher compared with state-of-the-art p-type transparent materials. A transparent and flexible CuI-based thermoelectric element is demonstrated. Our findings open a path for multifunctional technologies combing transparent electronics, flexible electronics and thermoelectricity.
Exploiting the excellent electronic properties of two-dimensional (2D) materials to fabricate advanced electronic circuits is a major goal for the semiconductor industry1,2. However, most studies in this field have been limited to the fabrication and characterization of isolated large (more than 1 µm2) devices on unfunctional SiO2–Si substrates. Some studies have integrated monolayer graphene on silicon microchips as a large-area (more than 500 µm2) interconnection3 and as a channel of large transistors (roughly 16.5 µm2) (refs. 4,5), but in all cases the integration density was low, no computation was demonstrated and manipulating monolayer 2D materials was challenging because native pinholes and cracks during transfer increase variability and reduce yield. Here, we present the fabrication of high-integration-density 2D–CMOS hybrid microchips for memristive applications—CMOS stands for complementary metal–oxide–semiconductor. We transfer a sheet of multilayer hexagonal boron nitride onto the back-end-of-line interconnections of silicon microchips containing CMOS transistors of the 180 nm node, and finalize the circuits by patterning the top electrodes and interconnections. The CMOS transistors provide outstanding control over the currents across the hexagonal boron nitride memristors, which allows us to achieve endurances of roughly 5 million cycles in memristors as small as 0.053 µm2. We demonstrate in-memory computation by constructing logic gates, and measure spike-timing dependent plasticity signals that are suitable for the implementation of spiking neural networks. The high performance and the relatively-high technology readiness level achieved represent a notable advance towards the integration of 2D materials in microelectronic products and memristive applications.
We report the formation of wave-like structures and nanostructured fuzzes in the polycrystalline tungsten (W) irradiated with high-flux and low-energy helium (He) ions. From conductive atomic force microscope measurements, we have simultaneously obtained the surface topography and current emission images of the irradiated W materials. Our measurements show that He-enriched and nanostructured strips are formed in W crystal grains when they are exposed to low-energy and high-flux He ions at a temperature of 1400 K. The experimental measurements are confirmed by theoretical calculations, where He atoms in W crystal grains are found to cluster in a close-packed arrangement between {101} planes and form He-enriched strips. The formations of wave-like structures and nanostructured fuzzes on the W surface can be attributed to the surface sputtering and swelling of He-enriched strips, respectively.
He-induced W nanofuzz growth over the W divertor target is one of the main limiting factors affecting the current design and development of fusion reactors. In this paper, based on He reaction rate model in W, we simulate the growth and evolution of He nanobubbles during W nanofuzz formation under fusion-relevant He+ irradiation conditions. Our modeling unveils the existence of He nanobubble-enriched W surface layer (<10 nm), formed due to the He diffusion in W crystal into defect sites. At an elevated temperature, the growth of He bubbles in the W surface layer prevents He atoms diffusing into the deep layer (>10 nm). The formation of W nanofuzz at the surface is attributed to surface bursting of high-density He bubbles with their radius of ~4 nm, and an increase in the surface area of irradiated W. Our findings have been well confirmed by the experimental measurements.
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