Epitaxial growth of copper oxide films by reactive cross-beam pulsed-laser deposition

Seiler, Wilfrid; Millon, Éric; Perrière, J.; Benzerga, Ratiba; Boulmer‐Leborgne, Chantal

doi:10.1016/j.jcrysgro.2009.03.047

Cited by 39 publications

(16 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…4(b). For samples without N 2 plasma treatment, the bandgap is about 1.7 eV, which is a little larger than the CuO film with a bandgap of 1.5 eV [16]; this is due to the mixture of CuO and Cu 2 O. It is found that the optical bandgap of Cu 2 O films with N 2 plasma treatment time of 40 min is 2.42 eV.…”

Section: Resultsmentioning

confidence: 88%

Nitrogen doping in cuprous oxide films synthesized by radical oxidation at low temperature

2013

View full text Add to dashboard Cite

Section: Resultsmentioning

confidence: 88%

Nitrogen doping in cuprous oxide films synthesized by radical oxidation at low temperature

2013

View full text Add to dashboard Cite

“…Although reasons for this are still debated and different epitaxial relationships have been reported [7,8,13,14], density functional theory calculations show that the Cu 2 O (1 1 0):CuO surface has the lowest energy, and generally the nonpolar Cu 2 O (1 1 0) surfaces have lower energies than the polar Cu 2 O (1 0 0) surfaces [12]. Lattice mismatch seems to be less important than surface energy in determining the preferential growth direction [7].…”

Section: Growth Using Pure Oxygen Plasmamentioning

confidence: 99%

Single phase, single orientation Cu2O (1 0 0) and (1 1 0) thin films grown by plasma-assisted molecular beam epitaxy

Tolstova

Wilson

Atwater

2015

Journal of Crystal Growth

View full text Add to dashboard Cite

This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting galley proof before it is published in its final citable form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. AbstractEpitaxial growth of cuprous oxide (Cu 2 O) has been achieved on (1 0 0) and (1 1 0) orientations of MgO by plasma-assisted molecular beam epitaxy. Growth was investigated using a pure oxygen plasma as well as a 90%Ar/10%O 2 plasma. Cu 2 O films grown using pure oxygen on MgO (1 0 0) have a limited growth window and typically exhibit multiple phases and orientations. Films grown on MgO (1 1 0) using pure oxygen are phase stable and predominantly (1 1 0) oriented, with some (2 0 0) orientation present. Films grown using an Ar/O 2 plasma on MgO (1 0 0) have improved phase stability and a single (1 1 0) orientation. Growth on MgO (1 1 0) using an Ar/O 2 plasma yields highly reproducible (1 1 0) oriented single phase Cu 2 O films with a much wider growth window, suggesting that this substrate orientation is preferable for Cu 2 O phase stability.

show abstract

“…Well-controlled artificial cuprite patinas have been produced in many ways, both for corrosion studies, and because cuprite is a semiconductor used (for example) in solar cells. Methods include electrochemical deposition [22,23], ultrasonic spray pyrolysis [24], sputter deposition [25], pulsed laser deposition [26], thermal oxidation [27] and many others.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and surface characterization of a patterned cuprite sample: Preparatory step in the evaluation scheme of an X-ray-excited optical microscopy system

Sabbe

Dowsett

Keersmaecker

et al. 2015

Applied Surface Science

View full text Add to dashboard Cite

Epitaxial growth of copper oxide films by reactive cross-beam pulsed-laser deposition

Cited by 39 publications

References 30 publications

Nitrogen doping in cuprous oxide films synthesized by radical oxidation at low temperature

Nitrogen doping in cuprous oxide films synthesized by radical oxidation at low temperature

Single phase, single orientation Cu2O (1 0 0) and (1 1 0) thin films grown by plasma-assisted molecular beam epitaxy

Synthesis and surface characterization of a patterned cuprite sample: Preparatory step in the evaluation scheme of an X-ray-excited optical microscopy system

Contact Info

Product

Resources

About