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We successfully fabricate flexible electrochromic supercapacitor (SC) electrodes employing novel flexible transparent conducting substrates. The as-synthesized flexible electrochromic SC electrodes exhibit great electrochemical performances (13.6 mF cm(-2), 138.2 F g(-1)) and high coloration efficiency (80.2 cm(2) C(-1)), which demonstrate their potential applications in flexible smart windows combining energy storage and electrochromism.

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Cuprous oxide (Cu(2)O) films synthesis by radical oxidation with nitrogen (N(2)) plasma treatment and different RF power at low temperature (500 °C) are studied in this paper. X-ray diffraction measurements show that synthesized Cu(2)O thin films grow on c-sapphire substrate with preferred (111) orientation. With nitrogen (N(2)) plasma treatment, the optical bandgap energy is increased from 1.69 to 2.42 eV, when N(2) plasma treatment time is increased from 0 min to 40 min. Although the hole density is increased from 10(14) to 10(15) cm(-3) and the resistivity is decreased from 1879 to 780 Ω cm after N(2) plasma treatment, the performance of Cu(2)O films is poorer compared to that of Cu(2)O using RF power of 0. The fabricated ZnO/Cu(2)O solar cells based on Cu(2)O films with RF power of 0 W show a good rectifying behavior with a efficiency of 0.02%, an open-circuit voltage of 0.1 V, and a fill factor of 24%.

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A significant enhancement of photoresponse from the light-controlled conductive switching based on Cu₂O/rGO nanocomposites was experimentally demonstrated. Cu₂O/rGO nanocomposites were synthesized via a facile wet-reduced method. The crystalline structure, morphologies, and photoluminescence of the Cu₂O/rGO nanocomposites were characterized and analyzed. The fabricated conductive switching was measured under the irradiation of a continuous laser. When the laser was turned on and off alternately, the photoconductive switching obviously displayed a state conversion between "on" and "off" reversibly. Furthermore, the typical current-voltage (I-V) and current-time (I-t) curves exhibited a relatively high switching ratio (I_on/I_off) of 3.25 and a fast response time of 0.45 s. The excellent "on-off" characteristics of the device show promising applications in memory storage and logic circuits.